M55D1G1664A-GFBG2Y

The M55D1G1664A-GFBG2Y is a JEDEC-compliant LPDDR3 SDRAM device offering 1.074 Gbit organized as 64M×16 with eight internal banks and an 8‑bit prefetch DDR architecture. It operates with separated core and I/O voltage domains and supports double data rate transfers up to a 1.066 GHz clock (2133 Mb/s per pin effective data rate as specified for this ordering code).

Designed for systems that require a standard LPDDR3 memory interface, the device provides programmable drive strength, on‑die termination and multiple power‑management modes to match system timing and power requirements.

Key Features

• Memory Organization 1.074 Gbit arranged as 64M×16 with eight internal banks and a 4 KB page size for structured memory access.
• Performance & Timing Maximum clock frequency 1.066 GHz with listed data rate 2133 Mb/s per pin; selectable read latencies (RL) including 3, 6, 8, 9, 10, 11, 12, 14, 16 and a fixed burst length (BL) of 8. Access time specified at 5.5 ns and write cycle time/word page at 15 ns.
• Voltage Domains Dual supply domains: VDD1 (core) = 1.70–1.95 V and VDD2/VDDCA/VDDQ (I/O/core auxiliary) = 1.14–1.30 V.
• Power and Refresh Modes Supports auto refresh, self refresh, auto temperature compensated self refresh (ATCSR), per‑bank refresh, partial‑array self refresh (PASR) and deep power‑down (DPD) for flexible power management. Refresh cycles: 4,096 cycles/32 ms with average refresh period 7.8 µs.
• Interface & Signal Features Double data rate command/address inputs, differential clock inputs (CK_t/CK_c), bidirectional/differential data strobe per byte (DQS), and data mask (DM) for write data control.
• Training & Timing Adjustment Supports CA training and write leveling for CA, DQ, DQS and DM timing alignment.
• System Controls On‑die termination (ODT), programmable drive strength (DS), bank masking and segment masking for flexible system integration.
• Package & Mounting 178‑ball BGA (10×11.5 mm) surface‑mount package, Pb‑free and RoHS compliant.
• Qualification & Grade JEDEC LPDDR3‑compliant device, commercial grade with operating temperature range −25 °C to 85 °C.

Typical Applications

• LPDDR3 memory subsystems For designs requiring JEDEC‑compliant LPDDR3 devices with 1 Gb density and standard DDR command/address timing.
• Embedded system memory As the primary DRAM component in embedded platforms that implement LPDDR3 interfaces and require programmable I/O and refresh control.
• Low‑voltage memory designs Systems that utilize separated core and I/O voltage domains (1.70–1.95 V and 1.14–1.30 V) for power management strategies.

Unique Advantages

• JEDEC‑compliant LPDDR3 implementation Ensures conformance to LPDDR3 timing and feature sets for straightforward integration into LPDDR3 designs.
• Dual‑voltage architecture Separate core and I/O supply ranges (1.70–1.95 V and 1.14–1.30 V) enable flexible power sequencing and reduced I/O power.
• Comprehensive power modes ATCSR, PASR, per‑bank refresh and deep power‑down options allow designers to balance refresh overhead and standby power.
• Robust timing control CA training and write leveling features support accurate timing alignment between controller and memory for reliable DDR transfers.
• Packaged for surface‑mount assembly 178‑ball BGA (10×11.5 mm) offers a compact, solderable form factor and Pb‑free compliance for modern assembly flows.
• Commercial temperature range Specified operation from −25 °C to 85 °C to meet a range of environmental requirements for commercial designs.

Why Choose M55D1G1664A-GFBG2Y?

The M55D1G1664A-GFBG2Y positions itself as a standards‑based LPDDR3 memory device that combines 1 Gb density, multi‑bank architecture and a full set of LPDDR3 power and training features. Its dual‑voltage domains, programmable drive and ODT options enable designers to tune signal integrity and power consumption to match system requirements.

With JEDEC LPDDR3 compliance, surface‑mount 178‑BGA packaging, Pb‑free and RoHS status, and a commercial temperature rating, this device is suitable for engineers and procurement teams specifying LPDDR3 memory for embedded and system‑level designs that require documented timing, refresh and power management behavior.

Request a quote or submit an RFQ to begin procurement for M55D1G1664A-GFBG2Y and include any required ordering details such as package and timing variant.