M55D1G3232A-GFBIG2Y

The M55D1G3232A-GFBIG2Y is a 1.074 Gbit LPDDR3 SDRAM device organized as 32M × 32 with eight internal banks and a 4KB page size. It is JEDEC LPDDR3-compliant and implements an eight-bit prefetch DDR architecture with differential clocks and per-byte bidirectional DQS signaling.

Targeted for industrial-grade applications, this device supports operation from −40 °C to 85 °C and dual-voltage supplies (VDD1 = 1.70–1.95 V; VDD2/VDDCA/VDDQ = 1.14–1.30 V). It provides high-speed operation at up to 1.066 GHz (data rate 2133 Mb/s per pin) in a Pb-free 178-ball BGA (10 × 11.5 mm) surface-mount package.

Key Features

• Memory Organization 1.074 Gbit organized as 32M × 32 with eight internal banks and a 4KB page size, supporting row addresses R0–R12 and column addresses C0–C8.
• Performance & Timing Supports a clock frequency up to 1.066 GHz (data rate 2133 Mb/s per pin) with selectable read latencies and write latency; this ordering code specifies RL = 16 and WL = 8. Documented access time is 5.5 ns and write-cycle time (word/page) is 15 ns.
• Power Domains & Low-Voltage Operation Separate core and I/O supplies: VDD1 = 1.70–1.95 V and VDD2/VDDCA/VDDQ = 1.14–1.30 V, enabling low-voltage operation across core and I/O rails.
• LPDDR3 Interface & Signal Features Double data rate command/address inputs, bidirectional/differential per-byte DQS, differential clock inputs (CK_t/CK_c), and data mask (DM) support. Includes CA training and write leveling for timing adjustments.
• Power and Refresh Management Auto refresh, self refresh, per-bank refresh for concurrent operation, Auto Temperature Compensated Self Refresh (ATCSR), Partial-Array Self Refresh (PASR), and Deep Power-Down (DPD) modes.
• System and I/O Controls On-die termination (ODT), programmable drive strength (DS), bank masking, segment masking, and eight internal banks for concurrent operations.
• Package and Environmental Pb-free 178-ball BGA (10 × 11.5 mm), surface-mount; RoHS-compliant and rated for industrial temperature range −40 °C to 85 °C.
• Standards & Compliance JEDEC LPDDR3-compliant device with standard refresh cycles (4,096 cycles/32 ms) and an average refresh period of 7.8 μs.

Unique Advantages

• High-speed LPDDR3 interface: Supports up to 1.066 GHz clock and 2133 Mb/s per pin for bandwidth-sensitive memory applications.
• Industrial temperature capability: Rated for −40 °C to 85 °C operation to meet elevated environmental requirements.
• Dual-voltage operation: Separate core and I/O supply ranges (1.70–1.95 V and 1.14–1.30 V) for flexible power management in system designs.
• Advanced memory controls: CA training, write leveling, ODT, programmable drive strength, and per-bank refresh provide robust timing and signal integrity options.
• Power-management modes: Supports deep power-down, auto/self-refresh, ATCSR and PASR to help reduce standby power while preserving data integrity.
• Compact, Pb-free package: 178-ball BGA (10 × 11.5 mm) surface-mount package for space-constrained, lead-free assemblies.

Why Choose M55D1G3232A-GFBIG2Y?

The M55D1G3232A-GFBIG2Y combines JEDEC-compliant LPDDR3 architecture, high data-rate operation, and industrial-temperature qualification to address embedded and industrial memory needs that require both performance and environmental robustness. Its separate core and I/O voltage domains, per-bank refresh capability, and comprehensive timing training features make it suitable for systems that demand predictable timing and flexible power management.

This device is a practical choice for designs that require a 1 Gb low-power DDR memory solution in a compact Pb-free BGA package, with features such as on-die termination, programmable drive strength, and advanced refresh modes to support long-term reliability and system-level integration.

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