M55D4G16256A-CDBG2R

The M55D4G16256A-CDBG2R from ESMT is a JEDEC-compliant LPDDR3 SDRAM organized as 256M × 16 (4.295 Gbit) with an operating frequency up to 800 MHz (1600 Mb/s per pin). It implements an eight-bank, eight‑bit prefetch DDR architecture with a 4KB page size and supports low‑voltage core and I/O operation for power‑sensitive memory applications.

Designed for high‑density surface‑mount integration, the device is supplied in a 178‑ball BGA (10 × 11.5 mm) package, is Pb‑free and rated for commercial operating temperatures from −25 °C to 85 °C.

Key Features

• Memory Organization — 4.295 Gbit organized as 256M × 16 with eight internal banks and a 4KB page size for concurrent-bank operation.
• Performance — Up to 800 MHz clock (1600 Mb/s per pin) with supported read latencies including RL = 12 and write latency WL = 6 for this part number; burst length = 8 and sequential burst type.
• Low‑Voltage Operation — Ultra‑low‑voltage core and I/O supplies with separate rails: VDD1 (core) and VDD2 / VDDCA / VDDQ ranges specified at 1.70–1.95 V and 1.14–1.30 V respectively.
• DDR Interface and Timing — Double data rate command/address inputs, differential clock inputs (CK_t/CK_c), bidirectional/differential per‑byte data strobe (DQS), and data mask (DM) for write data.
• Signal and Timing Calibration — Command/Address (CA) training and write leveling support for CA, DQ, DQS, and DM timing adjustment.
• Power and Refresh — Auto refresh, self refresh, per‑bank refresh (8192 cycles/32 ms), average refresh interval ~3.9 μs, Auto Temperature Compensated Self Refresh (ATCSR), Partial‑Array Self Refresh (PASR), and Deep Power‑Down (DPD).
• System Reliability and Tuning — Programmable drive strength, on‑die termination (ODT), bank masking and segment masking options to support signal integrity and selective refresh strategies.
• Form Factor and Compliance — 178‑ball BGA (10 × 11.5 mm), Pb‑free package; JEDEC LPDDR3 compliant; commercial grade operation.
• Device Timing — Access time 5.5 ns and write cycle time (word page) 15 ns as specified for device timing characteristics.

Typical Applications

• Low‑power DDR memory requirements — Suited to designs that require LPDDR3 performance with ultra‑low‑voltage core and I/O supplies.
• High‑density board designs — Compact 178‑ball BGA package supports surface‑mount integration where board space and package density matter.
• Systems needing JEDEC‑compliant LPDDR3 — Use where standard LPDDR3 interface, timing options and JEDEC compliance are required.

Unique Advantages

• Dual low‑voltage rails: Separate core and I/O supply ranges (1.70–1.95 V and 1.14–1.30 V) enable lower power operation and design flexibility for mixed‑voltage systems.
• JEDEC LPDDR3 compliance: Industry‑standard interface and timing options simplify integration with LPDDR3 controllers and memory subsystems.
• Timing calibration features: CA training and write leveling improve timing margin and signal alignment for reliable high‑speed transfers.
• Advanced power management: ATCSR, PASR, per‑bank refresh and Deep Power‑Down modes help reduce operating and standby power in constrained systems.
• Signal integrity controls: Programmable drive strength and ODT allow tuning for board‑level signal integrity across different layouts and termination schemes.
• Compact, Pb‑free BGA: 178‑ball BGA (10 × 11.5 mm) offers a compact footprint with Pb‑free construction for modern assembly processes.

Why Choose M55D4G16256A-CDBG2R?

The M55D4G16256A-CDBG2R delivers JEDEC‑compliant LPDDR3 memory in a compact 178‑ball BGA package with low‑voltage core and I/O operation, making it suitable for designs that require high‑density, low‑power DRAM at 800 MHz (1600 Mb/s per pin). Its combination of programmable drive strength, on‑die termination, CA training and write leveling supports reliable high‑speed interface tuning and system integration.

This device is targeted at commercial‑grade applications needing a standardized LPDDR3 solution with per‑bank refresh, advanced power‑saving modes and flexible timing options to meet varied performance and power targets while maintaining JEDEC interoperability.

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