M55D4G32128A-CDBG2R

The M55D4G32128A-CDBG2R is a JEDEC-compliant LPDDR3 SDRAM device organized as 128M×32 for a total density of 4.295 Gbit. It implements an eight-bank, eight-bit prefetch DDR architecture with differential clock inputs and per-byte DQS for high-speed double-data-rate operation.

With ultra-low-voltage core and I/O supplies and support for advanced LPDDR3 features such as on-die termination, write leveling and CA training, this 800 MHz (1600 Mb/s per pin) device is targeted at systems requiring compact, low-voltage DRAM in a 178-ball BGA surface-mount package.

Key Features

• Memory Organization — 4.295 Gbit arranged as 128M×32 with eight internal banks and a 4 KB page size for concurrent bank operation.
• Performance — 800 MHz clock frequency (data rate 1600 Mb/s per pin), double data rate interface, and selectable read latencies (including RL = 12 for this ordering code) and write latency (WL = 6 for this ordering code).
• Low-Voltage Power — Ultra-low-voltage operation: VDD1 = 1.70–1.95 V and VDD2/VDDCA/VDDQ = 1.14–1.30 V.
• DDR Architecture & Timing — Eight-bit prefetch DDR architecture, burst length (BL) = 8, sequential burst type, and support for CA training and write leveling for timing adjustment.
• Command and Data Interfaces — Differential clock inputs (CK_t and CK_c), bidirectional/differential DQS per byte, data mask (DM) for write operations, and parallel memory interface.
• Refresh & Power Management — Auto refresh, self-refresh, per-bank refresh, partial-array self refresh (PASR), auto temperature compensated self refresh (ATCSR), and deep power-down (DPD) support.
• Signal Integrity & Drive — On-die termination (ODT) and programmable drive strength (DS) for signal optimization.
• Package & Temperature — 178-ball BGA (10 × 11.5 mm) surface-mount package; commercial operating temperature range −25 °C to 85 °C.
• Standards & Compliance — JEDEC LPDDR3-compliant and RoHS (Pb-free) status.
• Timing Characteristics — Write cycle time (word/page) specified at 15 ns and access time listed at 5.5 ns.

Unique Advantages

• JEDEC LPDDR3 Compliance: Standardized command set, timing options and read/write latencies for predictable integration.
• Low-Voltage Operation: Separate core (VDD1) and I/O (VDD2/VDDCA/VDDQ) ranges (1.70–1.95 V and 1.14–1.30 V) to support low-voltage system designs.
• Concurrent Bank Operation: Eight internal banks and per-bank refresh enable interleaved accesses and refresh without global bank blocking.
• Advanced Timing Controls: CA training and write leveling support timing calibration for reliable high-speed interfaces.
• Compact Surface-Mount Package: 178-BGA (10×11.5 mm) package for space-constrained board designs.
• Power and Retention Modes: Auto refresh, self-refresh, ATCSR, PASR and deep power-down provide multiple options for power vs. data-retention trade-offs.

Why Choose M55D4G32128A-CDBG2R?

The M55D4G32128A-CDBG2R offers a JEDEC-compliant LPDDR3 solution delivering 4.295 Gbit density in a compact 178-BGA package with low-voltage core and I/O supplies. Its combination of eight internal banks, per-bank refresh, on-die termination and programmable drive strength provides design flexibility for systems that require high-speed DDR operation with fine-grained timing and power management controls.

This device is suited to designs that require verified LPDDR3 behavior, selectable latencies (RL/WL), and a commercial operating range (−25 °C to 85 °C). Technical detail and timing options are provided in the manufacturer's M55D4G32128A series documentation for system-level integration and validation.

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