M55D4G32128A-GFBG2R

The M55D4G32128A-GFBG2R is a JEDEC-compliant LPDDR3 SDRAM device organized as 128M×32 for a total of 4.295 Gbit. It implements an eight-bank, eight‑bit prefetch DDR architecture with a 4KB page size and supports double data rate command/address timing for high-throughput memory operation.

This part delivers up to 1066 MHz (2133 Mb/s per pin) operation in a compact 178‑ball BGA (10×11.5) package, with ultra‑low‑voltage core and I/O supplies (VDD1 = 1.70–1.95V; VDD2/VDDCA/VDDQ = 1.14–1.30V) and a commercial operating range of –25°C to 85°C. It is Pb‑free and RoHS compliant.

Key Features

• Memory Organization & Capacity 4.295 Gbit organized as 128M × 32 with eight internal banks and a 4KB page size for efficient, bank‑level concurrency.
• Performance & Timing Supports up to 1066 MHz clock frequency (2133 Mb/s per pin), with read latency (RL) = 16 and write latency (WL) = 8 for this ordering option; access time listed at 5.5 ns and write cycle time (word/page) at 15 ns.
• LPDDR3 DDR Architecture Eight‑bit prefetch DDR architecture, burst length 8, sequential burst type, bidirectional/differential DQS per byte, and differential clock inputs (CK_t/CK_c).
• Power Supplies Dual supply domains: VDD1 = 1.70–1.95V for core and VDD2/VDDCA/VDDQ = 1.14–1.30V for I/O and I/O calibration, enabling ultra‑low‑voltage operation.
• Memory Maintenance & Power Modes Supports auto refresh, self refresh, per‑bank refresh, 8192 refresh cycles/32 ms (average refresh period 3.9 μs), partial‑array self refresh (PASR), auto temperature compensated self refresh (ATCSR), and deep power‑down (DPD).
• Training & Timing Calibration Command/Address (CA) training and write leveling for clock→DQ/DQS/DM timing adjustment to support reliable high‑speed interfaces.
• Signal Integrity & Drive Control On‑die termination (ODT) and programmable drive strength (DS) for signal integrity tuning; data mask (DM) for write data control.
• Package & Compliance 178‑ball BGA (10×11.5) surface‑mount package, Pb‑free and RoHS compliant; JEDEC LPDDR3 compliant and commercial grade.

Typical Applications

• High‑bandwidth memory subsystems For designs requiring DDR architecture and up to 2133 Mb/s per pin throughput in a compact package.
• Compact board‑level memory Surface‑mount 178‑ball BGA footprint supports space‑constrained system boards while delivering 4.295 Gbit density.
• Low‑voltage designs Ideal where ultra‑low‑voltage core and I/O supplies (1.70–1.95V and 1.14–1.30V) are needed to manage system power budgets.

Unique Advantages

• High sustained data rate: Provides up to 1066 MHz operation (2133 Mb/s per pin) for bandwidth‑demanding memory access patterns.
• Robust timing controls: CA training and write leveling features simplify timing calibration at high speeds for reliable signal timing.
• Flexible power modes: Multiple refresh and self‑refresh modes (including PASR and ATCSR) plus deep power‑down reduce active and standby power as required.
• Signal integrity options: Programmable drive strength and on‑die termination allow board‑level tuning for cleaner high‑speed signaling.
• Compact, compliant package: 178‑ball BGA (10×11.5), Pb‑free, RoHS compliant, and JEDEC LPDDR3‑compliant for streamlined BOM and regulatory alignment.

Why Choose M55D4G32128A-GFBG2R?

The M55D4G32128A-GFBG2R positions itself as a practical LPDDR3 memory option for designs that need high data throughput, multi‑bank concurrency, and low‑voltage operation in a compact BGA package. Its JEDEC compliance, built‑in training and leveling functions, and a range of power and refresh modes make it suitable for integration into systems where predictable timing, power management, and board‑level signal tuning are important.

With a clear set of timing parameters (RL=16, WL=8 for this variant), defined voltage domains, and commercial temperature grading (–25°C to 85°C), this device offers verifiable specifications for procurement and design planning, supporting straightforward system integration and long‑term design stability.

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