M55D4G32128A-GFBIG2R

The M55D4G32128A-GFBIG2R is a 4.295 Gbit LPDDR3 SDRAM organized as 128M × 32 with an effective clock frequency of 1.066 GHz and a data rate of 2133 Mb/s per pin. It implements JEDEC-compliant LPDDR3 architecture with eight internal banks and an eight-bit prefetch DDR design.

Designed for industrial-grade applications, the device supports extended operation from −40 °C to 85 °C and is supplied in a compact 178-ball BGA (10 × 11.5 mm) package. The part is Pb-free and RoHS-compliant.

Key Features

• Memory Organization — 16M × 32-bit × 8 banks (128M × 32) delivering 4.295 Gbit capacity with a 4 KB page size for high-density, sequential access patterns.
• High-speed DDR Interface — Double data rate command/address inputs and per-byte bidirectional/differential data strobes (DQS) support burst length 8 and sequential burst type for high-throughput transfers.
• Performance Timing — Rated at 1.066 GHz clock frequency with an effective data rate of 2133 Mb/s per pin; read latency options include RL up to 16 and write latency WL = 8 for this ordering option.
• Low-voltage Operation — Ultra-low-voltage supplies with VDD1 = 1.70–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.30 V to support low-power system designs.
• Signal Integrity and Training — CA training, write leveling, programmable drive strength and on-die termination (ODT) help optimize timing and signal integrity on modern memory interfaces.
• Refresh and Power Management — Per-bank refresh, auto refresh/self refresh, Auto Temperature Compensated Self Refresh (ATCSR), partial-array self refresh (PASR), and deep power-down features for flexible power management; standard refresh cycles (8192 cycles/32 ms) with average refresh period ~3.9 μs.
• Reliability and Compliance — JEDEC LPDDR3-compliant device with industrial-grade temperature qualification and Pb-free packaging.
• Package and Mounting — Surface-mount 178-ball BGA (10 × 11.5 mm) for compact board integration in space-constrained systems.
• Additional Functional Options — Bank masking, segment masking, auto precharge, deep power-down and programmable features for flexible memory control and system-level optimization.

Typical Applications

• Industrial Systems — Suitable for industrial-grade designs that require memory operation across −40 °C to 85 °C and JEDEC LPDDR3 compatibility.
• Embedded Memory Subsystems — Provides a compact, high-density LPDDR3 option for embedded boards and modules requiring parallel LPDDR3 DRAM in a BGA footprint.
• Low-Voltage, High-Bandwidth Designs — Applicable where low-voltage core and I/O supplies and high data rate operation (2133 Mb/s per pin) are required.

Unique Advantages

• Industrial Temperature Range: Rated for −40 °C to 85 °C to meet the environmental needs of industrial applications.
• JEDEC LPDDR3 Compliance: Standard LPDDR3 feature set (8-bank architecture, 8-bit prefetch, defined RL/WL options) simplifies integration with LPDDR3-compatible controllers.
• Low-Voltage Power Profile: Dual-supply ranges (1.70–1.95 V and 1.14–1.30 V) support reduced power consumption in energy-conscious designs.
• Compact BGA Package: 178-ball BGA (10 × 11.5 mm) enables high-density board layouts while maintaining surface-mount manufacturability.
• Advanced Training and TI Controls: CA training, write leveling, programmable drive strength and ODT aid in reliable high-speed operation and signal integrity tuning.
• Flexible Power and Refresh Modes: Multiple self-refresh, partial-array, and deep power-down modes provide options to balance performance and power savings.

Why Choose M55D4G32128A-GFBIG2R?

The M55D4G32128A-GFBIG2R delivers a verified LPDDR3 feature set in a rugged industrial-grade package, combining high data rate capability (1.066 GHz / 2133 Mb/s per pin) with low-voltage operation and extensive power-management features. Its JEDEC-compliant architecture, signal-training support, and compact 178-BGA footprint make it well-suited for embedded and industrial designs that require dense, reliable DRAM in demanding thermal environments.

This part is a suitable option for engineers specifying LPDDR3 memory where capacity, controlled timing options (RL/WL), and industrial temperature performance are primary requirements.

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