M55D4G32128A-EEBG2R

The M55D4G32128A-EEBG2R from ESMT is a JEDEC-compliant LPDDR3 SDRAM device organized as 128M × 32 (4.295 Gbit) with eight internal banks. It implements an eight-bit prefetch DDR architecture with differential clock inputs and per-byte differential data strobes (DQS), providing a high-bandwidth, low-voltage memory option for commercial-grade designs.

Designed for systems that require LPDDR3 interface compatibility, low-voltage core and I/O operation, and compact BGA mounting, this device offers a balance of timing flexibility, refresh management and power modes suited to contemporary commercial embedded platforms.

Key Features

• Memory Organization — 4.295 Gbit organized as 128M × 32 with eight internal banks and a 4KB page size for concurrent bank operation.
• LPDDR3 Compliance — JEDEC LPDDR3-compliant device supporting double data rate command/address inputs and eight-bit prefetch architecture.
• Voltage Domains — Ultra-low-voltage core and I/O with VDD1 = 1.70–1.95V and VDD2 / VDDCA / VDDQ = 1.14–1.30V.
• Performance & Timing — Rated for 933 MHz clock (1866 Mb/s per pin data rate), selectable read latency (includes RL = 14 for this part), access time 5.5 ns and write cycle time (word page) 15 ns.
• Interface & Signaling — Differential clock inputs (CK_t, CK_c), bidirectional/differential DQS per byte, data mask (DM) for write, and HSUL_12 interface support.
• Refresh & Power Management — Per-bank refresh, auto refresh, self refresh, Auto Temperature Compensated Self Refresh (ATCSR), Partial-Array Self Refresh (PASR), and Deep Power-Down (DPD) modes. Refresh cycles: 8192 cycles/32 ms (average refresh period 3.9 μs).
• Training & Calibration — Command/Address (CA) training and write leveling for timing adjustment of CA, DQ, DQS and DM paths.
• On-die Features — Programmable drive strength (DS) and on-die termination (ODT) for interface tuning.
• Package & Temperature — Surface-mount 178-ball BGA (10 × 11.5 mm), Pb-free; operating temperature range −25 °C to 85 °C.
• Qualification & Compliance — Commercial grade with JEDEC qualification and RoHS compliance.

Typical Applications

• Commercial Embedded Systems — Provides JEDEC LPDDR3 memory for compact system modules and embedded platforms that require low-voltage, high-bandwidth DRAM.
• SoMs and Compact Modules — Small 178-BGA package and surface-mount mounting make it suitable for space-constrained module designs using LPDDR3 memory.
• Memory Upgrades for LPDDR3 Platforms — Drop-in LPDDR3-compliant device with standard timing and training features for existing LPDDR3 system designs.

Unique Advantages

• Low-voltage operation: Separate core and I/O supply ranges (VDD1 1.70–1.95V; VDD2/VDDCA/VDDQ 1.14–1.30V) enable lower-voltage system designs.
• High-bandwidth DDR interface: 933 MHz clocking with an 1866 Mb/s per-pin data rate supports demanding data throughput within LPDDR3 constraints.
• Flexible timing and calibration: Multiple read latency options, CA training and write leveling allow timing tuning for platform integration.
• Advanced refresh and low-power modes: Per-bank refresh, ATCSR, PASR and deep power-down modes give designers granular control over refresh and power behavior.
• Interface tuning and signal integrity: Programmable drive strength and on-die termination help optimize signal integrity on high-speed interfaces.
• Compact, industry-standard packaging: 178-ball BGA (10 × 11.5 mm) surface-mount package simplifies placement in module and board designs.

Why Choose M55D4G32128A-EEBG2R?

The M55D4G32128A-EEBG2R combines JEDEC LPDDR3 compliance, low-voltage core/I/O domains, and a compact 178-BGA footprint to deliver a verifiable LPDDR3 memory building block for commercial-grade designs. Its combination of selectable latencies, interface training features and comprehensive refresh/power modes supports reliable integration into systems requiring predictable timing and power behavior.

This device is well suited to designers and integrators building compact, LPDDR3-based platforms that require a balance of high data rate, configurable timing and low-voltage operation, backed by ESMT’s LPDDR3 product family specifications and RoHS-compliant, Pb-free packaging.

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