M55D4G16256A-GFBG2R

The M55D4G16256A-GFBG2R is a 4Gb LPDDR3 SDRAM organized as 256M × 16 with JEDEC LPDDR3 compliance and Pb‑free (RoHS) construction. It provides a dual-voltage architecture with ultra-low-voltage core and I/O supplies and a high-speed DDR interface suitable for designs requiring low-voltage, high-bandwidth memory.

Key electrical and timing characteristics include a clock frequency of 1.066 GHz (data rate 2133 Mb/s per pin), an access time of 5.5 ns, and a write cycle time (word page) of 15 ns. The device is supplied in a 178‑ball BGA (10 × 11.5 mm) and is rated for commercial operation from -25 °C to 85 °C.

Key Features

• Memory Organization  256M × 16 bits (4.295 Gbit) organized as 32M words × 16 bits × 8 banks, with a 4KB page size and eight internal banks for concurrent operation.
• Performance & Timing  Clock frequency 1.066 GHz (data rate 2133 Mb/s per pin); access time 5.5 ns; write cycle time (word page) 15 ns; burst length (BL) = 8 and burst type = sequential.
• Low-Voltage Power Architecture  Dual-supply ranges: VDD1 = 1.70 V–1.95 V and VDD2 / VDDCA / VDDQ = 1.14 V–1.30 V, supporting ultra-low-voltage core and I/O operation.
• DDR Interface & PHY Features  Double data rate command/address inputs, differential clock inputs (CK_t/CK_c), and bidirectional/differential data strobe per byte (DQS).
• Reliability & Refresh  JEDEC-compliant refresh architecture including auto refresh, self refresh, per-bank refresh, partial-array self refresh (PASR), and Auto Temperature Compensated Self Refresh (ATCSR); refresh cycles: 8192 cycles/32 ms (average refresh period 3.9 μs).
• Memory Training & Leveling  Command/Address (CA) training and write leveling support for timing adjustment of CA inputs, DQ, DQS, and DM relative to the clock.
• Power-Saving Modes  Deep Power-Down (DPD), auto precharge options, and self-refresh modes to reduce standby power when appropriate.
• Signal Integrity & Drive  On-die termination (ODT) and programmable drive strength (DS) for interface tuning.
• Package & Mounting  178‑ball BGA package (10 × 11.5 mm), surface-mount; Pb‑free (RoHS compliant).

Typical Applications

• Low‑Voltage High‑Bandwidth Memory Subsystems  Use where LPDDR3-class low-voltage DDR memory is required for high data-rate operation, leveraging the 2133 Mb/s per-pin data rate and DDR interface.
• Embedded Memory Designs  Systems that need a 4Gb, 256M×16 organization with multiple internal banks and 4KB page architecture for concurrent access patterns.
• Thermally Constrained Environments  Designs operating within the commercial temperature range (‑25 °C to 85 °C) that require JEDEC-compliant refresh and self‑refresh management.

Unique Advantages

• JEDEC LPDDR3 Compliance: Ensures standard command/address timing, refresh behavior, and read/write protocols for predictable integration into LPDDR3 memory subsystems.
• Dual Low‑Voltage Supplies: Separate core and I/O supply ranges (1.70–1.95 V and 1.14–1.30 V) allow power-optimized designs targeting ultra-low-voltage operation.
• Flexible Timing Options: Multiple supported read latency (RL) settings and programmable drive strength enable designers to tune performance and signal integrity for target system timing.
• Advanced Refresh and Power Modes: Per-bank refresh, PASR, ATCSR and deep power-down support reduce active and standby energy according to system needs.
• Compact BGA Package: 178‑ball BGA (10 × 11.5 mm) provides a space-efficient surface-mount solution for high-density board layouts.
• RoHS Compliant (Pb‑free): Meets environmental compliance requirements for lead‑free manufacturing.

Why Choose M55D4G16256A-GFBG2R?

The M55D4G16256A-GFBG2R positions as a JEDEC‑compliant LPDDR3 memory device offering a balanced combination of high data rate (2133 Mb/s per pin), low-voltage operation, and a compact 178‑BGA package. Its 256M × 16 organization with eight internal banks and 4KB page size supports concurrent access patterns and flexible memory management.

This device is suitable for designs that require LPDDR3 electrical and timing compatibility, configurable timing and drive strength, and comprehensive refresh and low-power modes. With RoHS compliance and a commercial temperature rating from -25 °C to 85 °C, it fits applications that demand predictable JEDEC LPDDR3 behavior and low-voltage power management.

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