M55D1G3232A-GFBG2Y

The M55D1G3232A-GFBG2Y is a JEDEC-compliant LPDDR3 SDRAM device providing 1.074 Gbit of volatile DRAM in a 32M × 32 organization. It implements an eight-bank, double data rate architecture with per-byte DQS and differential clock inputs to deliver high-bandwidth, low-voltage memory operation.

With a maximum clock frequency of 1,066 MHz (data rate 2,133 Mb/s per pin), supported read latencies, and low-voltage supplies, this device targets commercial embedded designs that require compact BGA packaging and energy-conscious memory subsystems.

Key Features

• Memory Architecture – 1.074 Gbit capacity organized as 32M × 32 with eight internal banks and a 4KB page size for concurrent access and burst operations.
• High-Speed DDR Interface – Double data rate command/address inputs and bidirectional/differential data strobe per byte (DQS) with differential clock inputs (CK_t/CK_c); maximum frequency 1,066 MHz and data rate up to 2,133 Mb/s per pin.
• Timing and Burst – Burst length (BL) = 8, selectable read latencies (RL = 3, 6, 8, 9, 10, 11, 12, 14, 16) and write latency (WL = 8 for this ordering), supporting flexible timing configurations.
• Low-Voltage Power Domains – Dual supply ranges: VDD1 = 1.70–1.95 V and VDD2 / VDDCA / VDDQ = 1.14–1.30 V to support ultra-low-voltage core and I/O operation.
• Power Management – Supports auto refresh, self refresh, per-bank refresh, partial-array self refresh (PASR), auto temperature compensated self refresh (ATCSR), and deep power-down (DPD) for optimized standby power.
• Training and Signal Integrity – Command/Address (CA) training and write leveling for timing adjustment; on-die termination (ODT) and programmable drive strength (DS) improve signal integrity.
• Reliability and Compliance – JEDEC LPDDR3-compliant device with RoHS compliance and Pb-free package options.
• Package and Temperature – 178-ball BGA (10 × 11.5 mm) surface-mount package; commercial operating temperature range −25 °C to 85 °C.

Typical Applications

• Commercial Embedded Systems – Provides compact, JEDEC-compliant LPDDR3 memory where low-voltage operation and high data throughput are required within a commercial temperature range.
• Memory Subsystems – Serves as a high-bandwidth DRAM element for designs that require an eight-bank LPDDR3 device with programmable timing and drive strength.
• Compact BGA Designs – Suited for space-constrained boards that need a 178-ball BGA LPDDR3 component with on-die termination and training features.

Unique Advantages

• Low-voltage dual-supply operation: Separate core and I/O supply ranges (1.70–1.95 V and 1.14–1.30 V) enable reduced power consumption and flexible power domain partitioning.
• High data throughput: 1,066 MHz clock and up to 2,133 Mb/s per pin data rate deliver substantial bandwidth for demanding memory transfers.
• Flexible timing options: Multiple RL settings and BL=8 burst length allow tuning for performance and system timing constraints.
• Advanced power modes: ATCSR, PASR, per-bank refresh, and deep power-down support fine-grained power management to lower standby energy use.
• Signal integrity controls: CA training, write leveling, ODT, and programmable drive strength help simplify layout margins and timing convergence.
• Commercial-grade robustness: JEDEC LPDDR3 compliance, RoHS status, and a Pb-free 178-BGA package support standard commercial deployments.

Why Choose M55D1G3232A-GFBG2Y?

The M55D1G3232A-GFBG2Y combines JEDEC-compliant LPDDR3 architecture, low-voltage operation, and high per-pin data rates in a compact 178-BGA package. Its configurable timing, comprehensive power-management modes, and signal-training features make it well suited for commercial embedded designs that need reliable, high-throughput DRAM with compact board footprint.

This device is appropriate for engineers specifying LPDDR3 memory where predictable performance, energy efficiency, and package-level integration are key selection criteria.

Request a quote or submit an inquiry to get pricing, availability, and lead-time information for the M55D1G3232A-GFBG2Y. Our team can provide technical details and support for integrating this LPDDR3 SDRAM into your design.