M55D4G32128A (2R)

The M55D4G32128A (2R) is an industrial-grade LPDDR3 SDRAM device offering 4.295 Gbit of volatile memory in a 128M × 32 organization. Designed for temperature-critical embedded systems, it delivers low-voltage operation, JEDEC LPDDR3 compliance and a compact 178-ball BGA package suitable for surface-mount integration.

Built for high-throughput, low-power applications, the device supports high clock rates (up to 1.066 GHz for the 1066 MHz variant) and features such as eight internal banks, 4KB page size, and flexible read-latency options to balance performance and power in industrial designs.

Key Features

• Memory Organization & Capacity — 4.295 Gbit total in a 128M × 32 arrangement with eight internal banks and a 4KB page size for efficient burst transfers.
• High-Speed Interface — LPDDR3 interface with double data rate command/address inputs, differential clock inputs and bidirectional/differential DQS per byte for reliable high-speed transfers; 1.066 GHz clock supported on the 1066 MHz variant (2133 Mb/s per pin data rate).
• Low-Voltage Operation — Nominal supplies 1.8V / 1.2V with device ranges VDD1 = 1.70–1.95V and VDD2 / VDDCA / VDDQ = 1.14–1.30V for reduced power consumption.
• Latency and Burst — Configurable read latency (RL) options including 3, 6, 8, 9, 10, 11, 12, 14, 16 and fixed burst length of 8 with sequential burst type for predictable throughput.
• Power Management — Supports auto refresh, self refresh, auto temperature compensated self refresh (ATCSR), deep power-down (DPD) and per-bank refresh to optimize power across operating modes.
• Signal Training & Timing — Command/Address (CA) training and write leveling for clock-to-DQ/DQS/DM timing adjustment to aid signal integrity during system bring-up.
• Reliability & Control — JEDEC LPDDR3-compliant feature set including on-die termination (ODT), programmable drive strength (DS), bank masking and segment masking for robust operation and flexible refresh control.
• Performance Timing — Access time specified at 5.5 ns with a write cycle time (word/page) of 15 ns to support fast read/write operations.
• Package & Mounting — 178-ball BGA surface-mount package suitable for compact board designs and industrial assembly processes.
• Industrial Temperature Range — Qualified for operation from −40 °C to 85 °C for use in extended-temperature environments.
• Regulatory — RoHS-compliant and supplied with JEDEC qualification.

Typical Applications

• Industrial Embedded Systems — Extended-temperature LPDDR3 memory for control, measurement and automation platforms requiring compact, surface-mount high-speed DRAM.
• Ruggedized Equipment — Memory for equipment operating across −40 °C to 85 °C where low-voltage operation and power-management features minimize thermal and energy impact.
• High-Bandwidth Buffering — Suitable for embedded designs that require deterministic burst transfers and configurable latency for streaming or buffering data in real time.

Unique Advantages

• Extended Temperature Support — Rated −40 °C to 85 °C to meet the thermal demands of industrial and ruggedized applications.
• Low-Voltage Dual-Rail Design — Separate core and I/O supply ranges (1.70–1.95V and 1.14–1.30V) reduce overall system power while maintaining LPDDR3 performance.
• Flexible Timing and Power Modes — Multiple RL options, write leveling, CA training, ATCSR and deep power-down support enable designers to balance latency, throughput and energy use.
• JEDEC Compliance — LPDDR3-compliant feature set and refresh management (8192 cycles/32 ms) provide predictable behavior and interoperability within LPDDR3 ecosystems.
• Compact, Surface-Mount Package — 178-ball BGA supports dense PCB layouts while providing the connectivity required for high-speed differential signals.
• Built for High Throughput — Eight internal banks, eight-bit prefetch DDR architecture and BL = 8 burst transfers support sustained high-bandwidth operations.

Why Choose M55D4G32128A (2R)?

The M55D4G32128A (2R) positions itself as an industrial LPDDR3 memory option that combines JEDEC-compliant high-speed operation with extended temperature capability and low-voltage operation. Its 4.295 Gbit density, flexible latency settings and comprehensive power-management features make it suitable for embedded designs that require reliable, high-throughput volatile memory in a compact BGA footprint.

This device is well suited to engineers developing ruggedized or industrial systems who need predictable timing, robust refresh and training features, and power modes that enable optimized system-level energy consumption and thermal performance.

Request a quote or submit an inquiry to obtain pricing, availability and variant details for the M55D4G32128A (2R) suited to your design and production needs.