M56Z8G16512A (2H)

The M56Z8G16512A (2H) from ESMT is an industrial-grade LPDDR4x SDRAM device providing 8.59 Gbit of volatile DRAM in a 512M × 16 organization. Designed as a high-density, parallel-interface memory component, it targets industrial and embedded systems that require JEDEC-qualified LPDDR4x memory in a compact BGA package.

Key architectural attributes include a 2.133 GHz clock frequency, a 2.5 V supply, and a surface-mount 200 Ball BGA package, delivering a balance of density, speed, and board-level integration for space-constrained applications.

Key Features

• Memory Architecture  LPDDR4x SDRAM organized as 512M × 16 for a total memory size of 8.59 Gbit, suitable for high-density embedded memory requirements.
• Performance  2.133 GHz clock frequency with an access time of 3.5 ns and a write cycle time (word/page) of 18 ns, enabling responsive data transactions.
• Power  Operates from a 2.5 V supply; LPDDR4x technology indicates low-voltage LPDDR architecture at the specified supply rail.
• Package & Mounting  Surface-mount device in a 200 Ball BGA package for compact board integration and high pin density.
• Grade & Qualification  Industrial grade device with JEDEC qualification and RoHS compliance for regulated production environments.
• Operating Conditions  Specified operating temperature range of −40 °C to 85 °C to support a wide range of industrial ambient environments.

Typical Applications

• Industrial Control Systems  High-density LPDDR4x memory for data buffering and program storage in industrial controllers and PLCs.
• Embedded Computing  Memory for embedded processors and edge devices requiring parallel LPDDR4x DRAM in a compact BGA footprint.
• Networking and Communications  Buffer and packet memory in networking modules where JEDEC-qualified LPDDR4x performance and density are required.

Unique Advantages

• High-density Storage: 8.59 Gbit capacity (512M × 16) provides substantial memory in a single device to reduce board-level component count.
• High-speed Access: 2.133 GHz clock with 3.5 ns access time and 18 ns write cycle time supports responsive system memory operations.
• Industrial Qualification: JEDEC qualification and an industrial operating temperature range (−40 °C to 85 °C) for deployment in demanding environments.
• Compact BGA Package: 200 Ball BGA surface-mount package enables dense placement on space-constrained PCBs.
• Regulatory Compliance: RoHS-compliant construction to meet environmental and regulatory requirements.
• Low-voltage LPDDR4x: LPDDR4x technology with a 2.5 V supply rail to support low-voltage system architectures.

Why Choose M56Z8G16512A (2H)?

The M56Z8G16512A (2H) positions itself as a JEDEC-qualified, industrial-grade LPDDR4x DRAM solution that combines high density, fast access times, and a compact 200 Ball BGA package. Its 2.133 GHz clock rate, 8.59 Gbit capacity, and 2.5 V supply make it suitable for embedded and industrial designs that require reliable, parallel-interface memory with verified qualification.

Designers and procurement teams building industrial controllers, embedded compute modules, or network equipment will find this ESMT LPDDR4x device appropriate where JEDEC qualification, RoHS compliance, and an extended operating temperature range are important for long-term deployment and supply-chain consistency.

Request a quote or submit a sales inquiry for pricing, availability, and lead-time information to evaluate the M56Z8G16512A (2H) for your next design.