M56Z4G16256A2H

The M56Z4G16256A(2H) is an LPDDR4x SDRAM device from ESMT offering a 4.295 Gbit memory capacity in a 256M × 16 organization. It combines LPDDR4x architecture with a 16n prefetch DDR core and multiple power domains for high-bandwidth, low-voltage operation.

Designed for systems that require high data throughput and power efficiency, the device delivers up to 8.5 GB/s per die, programmable latencies and burst lengths, and JEDEC qualification for straightforward integration into LPDDR4x memory subsystems.

Key Features

• Core & Architecture  16n prefetch DDR architecture with 8 internal banks per channel and single-data-rate CMD/ADR entry to support concurrent bank operation and efficient command scheduling.
• Memory Organization & Capacity  4.295 Gbit total capacity implemented as 256M × 16 (one channel × 16 I/O); device configured as 256M16 × 1 die in package.
• Performance  Clock frequency specified at 2.133 GHz with rated data rate up to 4266 Mbps/pin (ordering information); up to 8.5 GB/s per die throughput.
• Timing  Access time 3.5 ns, write cycle time (word/page) 18 ns, and programmable READ/WRITE latencies (RL/WL). Speed grade cycle times include 535 ps @ RL = 32/36 and 468 ps @ RL = 36/40.
• Power Domains & Voltage  Ultra-low-voltage operation with VDD1 = 1.70–1.95 V (1.80 V nominal), VDD2 = 1.06–1.17 V (1.10 V nominal), and VDDQ options including 1.06–1.17 V or low VDDQ = 0.57–0.65 V.
• Data Interface  LPDDR4X interface with bidirectional/differential data strobe per byte lane and programmable burst lengths (BL = 16, 32) for flexible data transfers.
• Refresh & Power Management  Directed per-bank refresh for concurrent bank operation, partial-array self refresh (PASR), on-chip temperature sensor to control self-refresh rate, and clock-stop capability for power savings.
• Packaging & Mounting  200 Ball BGA surface-mount package for compact board integration; device configuration and ball descriptions provided for routing and layout.
• Operating Range & Compliance  Commercial grade with operating temperature −25 °C to +85 °C and JEDEC qualification; RoHS-compliant packaging.

Typical Applications

• High-bandwidth memory subsystems  Use where sustained data throughput is required; the device supports up to 8.5 GB/s per die and programmable burst lengths for optimized transfers.
• Power-sensitive designs  Suitable for systems constrained by power budget thanks to LPDDR4x low-voltage domains (VDD1, VDD2, VDDQ) and clock-stop capability to reduce idle power.
• Compact board layouts  200 Ball BGA package enables dense, surface-mount integration on space-constrained PCBs.
• Memory subsystems requiring JEDEC qualification  JEDEC-qualified LPDDR4/LPDDR4X device for designs that reference industry-standard specifications.

Unique Advantages

• Low-voltage operation: Reduces system power draw with VDD1 = 1.70–1.95 V and selectable VDDQ options for finer power tuning.
• High data throughput: Up to 8.5 GB/s per die and 2.133 GHz clocking deliver the bandwidth needed for demanding memory transfers.
• Flexible timing and bursts: Programmable RL/WL and selectable burst lengths (BL = 16, 32) let designers tune latency and transfer size for application needs.
• Advanced refresh and power features: Directed per-bank refresh, PASR, and on-chip temperature sensor enable efficient, reliable operation and lower refresh overhead.
• Compact, standardized package: 200 Ball BGA surface-mount package simplifies high-density board designs while maintaining JEDEC compatibility.
• Standards and environmental compliance: JEDEC qualification and RoHS-compliant packaging support regulatory and industry requirements.

Why Choose M56Z4G16256A(2H)?

The M56Z4G16256A(2H) balances high-bandwidth performance with low-voltage operation and flexible timing controls, making it a practical choice for memory subsystems that need measurable throughput and power efficiency. Its LPDDR4x architecture, programmable latencies, and directed per-bank refresh support robust memory scheduling and optimization.

This JEDEC-qualified, RoHS-compliant device in a 200 Ball BGA package is suited to designs that demand compact, surface-mount integration and predictable thermal/voltage behavior across a commercial temperature range. Engineers seeking a scalable LPDDR4x die with on-chip power and refresh features will find the M56Z4G16256A(2H) a technically transparent option for system-level memory design.

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