MT28F128J3FS-12 MET

IC FLASH 128MBIT PARALLEL 64FBGA
Part Description

IC FLASH 128MBIT PARALLEL 64FBGA

Quantity 1,403 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package64-FBGA (10x13)Memory FormatFLASHTechnologyFLASH
Memory Size128 MbitAccess Time120 nsGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging64-FBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization16M x 8, 8M x 16
Moisture Sensitivity Level2 (1 Year)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT28F128J3FS-12 MET – IC FLASH 128MBIT PARALLEL 64FBGA

The MT28F128J3FS-12 MET is a 128 Mbit, parallel-interface Q-FLASH® memory device in a 64-ball FBGA package. It provides non-volatile FLASH storage with asynchronous page mode read support and a 16M × 8 or 8M × 16 memory organization.

Designed for systems that require parallel NOR-style flash storage, the device combines sector-based erase architecture, on-chip protection features and a wide 2.7 V to 3.6 V operating range to support reliable code and data storage across a wide temperature span.

Key Features

  • Memory Architecture — 128 Mbit FLASH organized as 16M × 8 or 8M × 16 with one hundred twenty-eight 128 KB erase blocks for the 128 Mb density.
  • Read Performance — Asynchronous page mode reads at 120 ns / 25 ns read access time for the 128 Mb device, supporting fast code fetch and data access patterns.
  • Program and Erase — Automatic write and erase algorithms with 5.6 μs-per-byte effective programming time using the write buffer and up to 100,000 erase cycles per block.
  • Protection and Identification — 128-bit protection register, 64-bit unique device identifier, and 64-bit user-programmable OTP cells for device authentication and secure storage.
  • Enhanced Data Protection — Flexible sector locking, sector erase/program lockout during power transition, and enhanced protection feature when VPEN = VSS.
  • Interface and Compatibility — Parallel memory interface with industry-standard pinout; inputs and outputs are fully TTL-compatible. Supports Common Flash Interface (CFI) and Scalable Command Set.
  • Voltage and Temperature — VCC, VCCQ, and VPEN operation/programming from 2.7 V to 3.6 V; extended operating temperature range of −40 °C to +85 °C (TA).
  • Package — 64-FBGA (10 × 13) ball grid array for compact board-level footprint.

Typical Applications

  • Embedded Systems — Parallel FLASH storage for embedded controllers and systems that require non-volatile program or data retention within −40 °C to +85 °C operating range.
  • Firmware and Code Storage — Storage of system firmware and boot code with fast asynchronous page-mode reads and sector-based erase granularity.
  • Industrial Equipment — Non-volatile storage in industrial environments where extended temperature operation and high erase cycle endurance (100,000 cycles per block) are required.

Unique Advantages

  • Flexible Density and Organization — 16M × 8 and 8M × 16 organizations provide designers options for byte- or word-oriented data buses without changing core device family.
  • Fast Read Path — 120 ns asynchronous access with a 25 ns page-mode option for the 128 Mb device, enabling faster code fetches in parallel-memory systems.
  • Robust Endurance — Up to 100,000 erase cycles per block and automatic erase/program algorithms to support long service life for frequently updated sectors.
  • On-Chip Security and ID — 128-bit protection register plus 64-bit unique device ID and 64-bit OTP for device identification and secure, non-volatile data storage.
  • Broad Voltage Range — 2.7 V to 3.6 V operation for compatibility with common 3 V system domains and programming operations.
  • Compact FBGA Package — 64-ball FBGA (10 × 13) package provides a small board footprint while maintaining industry-standard pinout for parallel flash deployment.

Why Choose IC FLASH 128MBIT PARALLEL 64FBGA?

The MT28F128J3FS-12 MET is positioned as a reliable 128 Mbit parallel FLASH device in Micron’s Q-FLASH® family, combining sector-based erase architecture, on-chip protection, and industry-standard parallel interfacing. Its combination of read performance, write-buffer programming efficiency, and extended temperature operation makes it suitable for designs that require robust non-volatile storage and predictable behavior across a range of operating conditions.

This device is appropriate for engineers specifying parallel NOR-style flash for firmware, code shadowing, or data storage in embedded and industrial systems. The array of protection features, unique ID and OTP cells, and high erase endurance support long-term deployment and device traceability within product lifecycles.

Request a quote or submit an inquiry to obtain pricing and availability for the MT28F128J3FS-12 MET and to discuss integration details for your design.

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