MT28F128J3RG-12 MET TR

The MT28F128J3RG-12 MET TR is a 128 Mbit non-volatile Q-FLASH® memory device from Micron Technology Inc., organized as 16M × 8 or 8M × 16 with a parallel memory interface. It is delivered in a 56-pin TSOP (56-TFSOP) package and supports asynchronous page-mode reads.

Designed for systems requiring parallel flash storage, the device provides 120 ns read access (128 Mb option), wide 2.7 V to 3.6 V supply range for VCC/VCCQ/VPEN, and an extended operating temperature range of −40 °C to +85 °C, along with block-level erase/program protection and suspend features to support robust firmware and data storage.

Key Features

• Memory Organization  128 Mbit capacity arranged as 16M × 8 or 8M × 16 with one hundred twenty-eight 128 KB erase blocks.
• Interface & Read Performance  Parallel memory interface with asynchronous page-mode reads and 120 ns read access time for the 128 Mb device; inputs and outputs are TTL‑compatible with an industry-standard pinout.
• Power  VCC, VCCQ, and VPEN operate from 2.7 V to 3.6 V; application programming supported in the same voltage range.
• Reliability & Endurance  Rated for 100,000 erase cycles per block with automatic write and erase algorithms and automatic suspend options (block erase suspend-to-read, block erase suspend-to-program, program suspend-to-read).
• Protection & Security  128-bit protection register, 64-bit unique device identifier, 64-bit user-programmable OTP cells, enhanced data protection when VPEN = VSS, and flexible sector locking with lockout during power transitions.
• Programming Efficiency  Write buffer yields an effective programming time of 5.6 µs per byte.
• Standards & Command Support  Common Flash Interface (CFI) and Scalable Command Set, plus manufacturer identification codes and query/read identifier commands.
• Package & Temperature  56-TFSOP (0.724", 18.40 mm width) TSOP package; operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded systems  Non-volatile code and data storage where a parallel NOR flash interface is required for system firmware and memory-mapped reads.
• Firmware storage  Boot code and firmware images benefitting from block erase/program operations, sector locking, and unique device identification.
• Industrial equipment  Systems requiring extended temperature support (−40 °C to +85 °C) and wide supply voltage range (2.7 V–3.6 V).

Unique Advantages

• Parallel NOR architecture: Facilitates straightforward memory-mapped reads and legacy parallel interface integration.
• Block-level management and protection: 128 KB erase block granularity with flexible sector locking and protection register features to safeguard firmware and data.
• Robust endurance: 100,000 erase cycles per block and automatic write/erase algorithms support sustained field updates.
• Programmability and speed: Write-buffer programming yields a 5.6 µs-per-byte effective programming time and supports asynchronous page-mode reads at 120 ns access.
• Wide operating envelope: 2.7 V–3.6 V supply range and −40 °C to +85 °C operating temperature support a variety of system environments.
• Standards compatibility: CFI and Scalable Command Set support plus industry-standard pinout simplify system integration and identification.

Why Choose IC FLASH 128MBIT PARALLEL 56TSOP?

The MT28F128J3RG-12 MET TR provides a practical combination of capacity, parallel interface compatibility, and device-level protection features for systems that require reliable non-volatile storage with straightforward integration. Its 128 Mbit organization, block-level erase management, and programming efficiency make it suitable for designs that need persistent firmware or data storage with controlled update behavior.

This device is well suited to designers and procurement teams seeking a Micron Q‑FLASH memory solution offering defined access timing (120 ns for the 128 Mb option), a 56-pin TSOP footprint, broad supply-voltage support, and extended temperature operation for long-term deployment in a range of electronic systems.

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