MT28F128J3FS-12 MET TR

The MT28F128J3FS-12 MET TR is a 128 Mbit non-volatile FLASH memory device in a 64-ball FBGA package. It is organized for x8 or x16 operation and provides parallel asynchronous page-mode reads with industry-standard pinout and TTL-compatible inputs/outputs.

Designed for systems that require block-erasable parallel flash storage, the device combines 120 ns read access performance (128 Mb option), broad 2.7 V–3.6 V supply operation, and on-die protection and security features for robust data management in temperature ranges from −40 °C to +85 °C.

Key Features

• Memory Capacity & Organization 128 Mbit FLASH memory organized as 16M × 8 or 8M × 16, with one hundred twenty-eight 128 KB erase blocks (128 Mb configuration).
• Interface & Performance Parallel memory interface with asynchronous page-mode reads; 128 Mb device read access time 120 ns / 25 ns (page-mode reporting in datasheet).
• Voltage & Power VCC, VCCQ, and VPEN operate across a 2.7 V to 3.6 V range, including application programming at the same voltage range.
• Package & Mechanical 64-ball FBGA package (10 × 13, 1.00 mm pitch) for space-efficient board mounting.
• Data Protection & Security 128-bit protection register, 64-bit unique device identifier, and 64-bit user-programmable OTP cells. Enhanced data protection features tied to VPEN include flexible sector locking and erase/program lockout during power transitions.
• Programming & Commands Automatic write and erase algorithms with a write buffer delivering a 5.6 μs-per-byte effective programming time; supports Common Flash Interface (CFI) and Scalable Command Set.
• Reliability & Endurance Up to 100,000 erase cycles per block and automatic suspend options (Block Erase Suspend-to-Read, Block Erase Suspend-to-Program, Program Suspend-to-Read) to maintain system responsiveness during memory operations.
• Compatibility & Identification Industry-standard pinout and TTL-compatible I/Os. Manufacturer identification and query features are supported via Read Identifier and CFI query structures.

Unique Advantages

• High-density storage: 128 Mbit capacity with 128 KB erase blocks provides substantial non-volatile storage while maintaining manageable block sizes for firmware and data management.
• Flexible parallel interface: Asynchronous page-mode reads and industry-standard pinout simplify integration into parallel-memory systems that require direct-read access patterns.
• Wide supply voltage range: 2.7 V–3.6 V operation for VCC, VCCQ, and VPEN enables compatibility with common 3 V system rails.
• On-die protection and identity: 128-bit protection register plus 64-bit unique ID and 64-bit OTP cells support device authentication and block-level protection strategies.
• Improved programming efficiency: Write-buffered programming with a 5.6 μs-per-byte effective programming time reduces overall programming latency compared to byte-only programming.
• Endurance and operational continuity: 100,000 erase cycles per block and suspend/resume options support long-term data retention and allow read/program/erase interleaving for continued system operation during maintenance cycles.

Why Choose MT28F128J3FS-12 MET TR?

The MT28F128J3FS-12 MET TR positions itself as a robust parallel FLASH memory option that combines 128 Mbit density, industry-standard interfacing, and a broad supply voltage window. Its on-die protection features, unique device identifier, and support for CFI and scalable commands make it suitable for designs that require verifiable device identity and flexible command compatibility.

With 100,000 erase-cycle endurance, automatic write/erase algorithms, and suspend capabilities, the device addresses long-term reliability and runtime continuity needs. The 64-ball FBGA package and −40 °C to +85 °C operating range support deployment where board-area efficiency and extended-temperature operation are required.

Request a quote or submit an inquiry to get pricing and availability information for the MT28F128J3FS-12 MET TR. Technical and procurement questions can be submitted to receive a formal response.