MT29F32G08CBEDBL83A3WC1
| Part Description |
IC FLASH 32GBIT PARALLEL DIE |
|---|---|
| Quantity | 123 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBEDBL83A3WC1 – IC FLASH 32GBIT PARALLEL DIE
The MT29F32G08CBEDBL83A3WC1 is a 32 Gbit non-volatile FLASH NAND memory provided as a bare die. It is organized as 4G × 8 and implements a parallel memory interface.
Key device attributes include a supply voltage range of 2.7 V to 3.6 V and an ambient operating temperature range of 0°C to 70°C. The die form factor supports integration into custom package or module workflows where raw NAND die is required.
Key Features
- Memory Core 32 Gbit capacity organized as 4G × 8, providing non-volatile storage using NAND flash technology.
- Technology & Format FLASH - NAND technology; memory format is FLASH, intended for non-volatile data retention.
- Interface Parallel memory interface suitable for parallel NAND implementations.
- Power Operates from a 2.7 V to 3.6 V supply range.
- Package Supplied as a die (bare die form), enabling direct integration into custom assemblies or multi-die packages.
- Temperature Range Specified operating ambient temperature: 0°C to 70°C (TA).
Unique Advantages
- High-density non-volatile storage: 32 Gbit capacity in a single die enables compact storage integration.
- Parallel interface compatibility: Parallel memory interface supports designs that use parallel NAND architectures.
- Flexible supply voltage: 2.7 V to 3.6 V range accommodates common system power rails.
- Die form for custom integration: Delivered as a bare die for direct incorporation into custom packages or module-level assemblies.
- Standard NAND flash format: FLASH - NAND technology and standard memory organization (4G × 8) simplify system-level memory planning.
Why Choose MT29F32G08CBEDBL83A3WC1?
MT29F32G08CBEDBL83A3WC1 positions itself as a straightforward 32 Gbit parallel NAND flash die option for designs that require non-volatile storage in a bare-die form. Its defined supply voltage range and ambient temperature specification provide clear integration parameters for system designers.
This die is suitable for projects and assemblies that need parallel NAND flash with a 4G × 8 organization and a compact die-level footprint. Choose this device when a die-form NAND solution with explicit electrical and thermal limits is required.
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