MT29F32G08CBCCBH1-12Z:C

The MT29F32G08CBCCBH1-12Z:C is a 32 Gbit non-volatile FLASH - NAND memory device organized as 4G × 8 with a parallel memory interface. It is specified for operation on a 2.7 V to 3.6 V supply and supports an 83 MHz clock frequency.

This device is intended for systems that require high-density parallel NAND storage in a compact 100-VBGA (12×18) package, and for designs that operate within an ambient temperature range of 0°C to 70°C (TA).

Key Features

• Memory Type & Technology Non-volatile FLASH – NAND memory for persistent data and code storage.
• Capacity & Organization 32 Gbit capacity organized as 4G × 8 to provide high density in a single-device solution.
• Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz for synchronous operation.
• Voltage Supply Operates from 2.7 V to 3.6 V, matching common 3.3 V system rails.
• Package 100-VBGA package, footprint 12×18 mm, for compact board-level integration.
• Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Embedded systems Use as non-volatile program or data storage in embedded control and processing modules.
• Consumer electronics Integration where compact, high-density NAND flash is required for firmware or media storage.
• Storage modules Suitable for board-level storage implementations that need parallel NAND memory in a small package.

Unique Advantages

• High-density storage: 32 Gbit capacity and 4G × 8 organization deliver significant on-board non-volatile memory in a single device.
• Parallel interface simplicity: Parallel memory interface supports straightforward system integration where parallel bus architectures are used.
• System voltage flexibility: 2.7 V to 3.6 V supply range aligns with standard 3.3 V designs, easing power-supply planning.
• Compact package: 100-VBGA (12×18) package provides a small footprint for space-constrained board layouts.
• Defined operating range: Specified ambient temperature range of 0°C to 70°C enables selection for commercial-temperature applications.
• Established NAND technology: FLASH - NAND implementation provides non-volatile storage suitable for program and data retention.

Why Choose MT29F32G08CBCCBH1-12Z:C?

The MT29F32G08CBCCBH1-12Z:C combines a high 32 Gbit NAND FLASH capacity with a parallel interface and a compact 100-VBGA (12×18) package, offering a practical solution for designs needing substantial non-volatile storage in a small footprint. Its 2.7 V–3.6 V supply range and 83 MHz clock specification make it appropriate for systems designed around common 3.3 V rails and parallel memory architectures.

This device is suited to engineers and procurement teams developing commercial-temperature embedded systems, consumer electronics, and board-level storage modules where a defined operating temperature range and clear electrical specifications are required. Its specification-driven profile supports predictable integration and long-term design planning.

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