MT29F32G08CBADBWPR:D
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 987 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBADBWPR:D – 32 Gbit Parallel NAND Flash (48‑TSOP I)
The MT29F32G08CBADBWPR:D is a non-volatile NAND flash memory device manufactured by Micron Technology Inc. It provides 32 Gbit of FLASH storage organized as 4G × 8 with a parallel memory interface for board-level integration.
Designed for systems operating from a 2.7 V to 3.6 V supply and rated for an ambient temperature range of 0°C to 70°C, the device is supplied in a 48‑TSOP I (48‑TFSOP, 0.724", 18.40 mm width) package to support compact footprint requirements.
Key Features
- Memory Type & Capacity Non-volatile FLASH (NAND) memory with a total capacity of 32 Gbit organized as 4G × 8.
- Interface Parallel memory interface suitable for parallel bus designs and direct memory mapping.
- Supply Voltage Wide operating supply range from 2.7 V to 3.6 V to accommodate common 3 V system rails.
- Package Supplied in a 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width) for compact board-level mounting.
- Operating Temperature Rated for operation from 0°C to 70°C (TA), suitable for standard commercial temperature environments.
- Memory Organization & Format 4G × 8 organization in FLASH format enabling byte-wide data access.
Unique Advantages
- High-density storage: 32 Gbit capacity provides substantial non-volatile storage in a single device, simplifying BOM for higher-capacity designs.
- Parallel interface for direct integration: Parallel memory interface enables straightforward connection to parallel bus architectures and legacy memory controllers.
- Flexible power range: 2.7 V to 3.6 V operation supports common 3 V systems and eases power-supply design considerations.
- Compact package footprint: 48‑TSOP I package offers a compact form factor for space-constrained PCB layouts.
- Commercial temperature rating: 0°C to 70°C specification aligns with standard commercial applications and deployments.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08CBADBWPR:D positions itself as a straightforward, high-density parallel NAND flash option for designs that require 32 Gbit of non-volatile storage with a byte-wide memory organization. Its 2.7 V to 3.6 V supply range and 48‑TSOP I packaging make it suitable for compact board layouts and conventional 3 V system architectures.
Manufactured by Micron Technology Inc., this device is appropriate for projects that need a reliable NAND FLASH component with defined commercial temperature operation and a parallel interface for integration with existing parallel memory infrastructures.
Request a quote or contact sales to check availability and pricing for MT29F32G08CBADBWPR:D.
