MT29F32G08CBADBWP-12:D TR

The MT29F32G08CBADBWP-12:D TR is a 32 Gbit non-volatile FLASH NAND memory device organized as 4G × 8 with a parallel memory interface. Designed for systems that require parallel FLASH storage, it provides a defined clock frequency and a standard TSOP package to simplify board-level integration.

Key electrical and mechanical characteristics include a 2.7 V to 3.6 V supply range, an 83 MHz clock frequency, and a 48-TSOP I (48-TFSOP, 18.40 mm width) package, with an operating temperature range of 0°C to 70°C (TA).

Key Features

• Memory Type Non-volatile FLASH NAND memory providing persistent data retention without power.
• Memory Capacity & Organization 32 Gbit capacity organized as 4G × 8 for parallel data access and addressing.
• Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz for timed data transfers.
• Voltage Supply Operates from 2.7 V to 3.6 V, allowing compatibility with standard 3.0 V systems.
• Package 48-TSOP I / 48-TFSOP package (0.724", 18.40 mm width) for board-level mounting and space planning.
• Operating Temperature Specified operating range of 0°C to 70°C (TA) for standard commercial environments.

Typical Applications

• Parallel Flash Storage Systems Provides non-volatile parallel memory for systems that require 32 Gbit FLASH capacity in a TSOP package.
• Embedded Memory Subsystems Suitable where a parallel NAND FLASH device with 4G × 8 organization and an 83 MHz clock interface is required.
• Board-Level Integration Used in designs that need a 48-TSOP I package and a 2.7 V–3.6 V supply range for module-level memory.

Unique Advantages

• Large 32 Gbit Capacity: Provides substantial non-volatile storage in a single-device solution to reduce component count.
• Parallel Interface at 83 MHz: Defined clock frequency supports predictable timing for parallel data transfers.
• Standard TSOP Package: 48-TSOP I (48-TFSOP) packaging simplifies footprint planning and mechanical integration on PCBs.
• Wide Voltage Range: 2.7 V to 3.6 V supply range enables operation with common 3.0 V system rails.
• Commercial Temperature Range: Rated for 0°C to 70°C (TA) to meet typical commercial environment requirements.

Why Choose MT29F32G08CBADBWP-12:D TR?

The MT29F32G08CBADBWP-12:D TR combines a high-capacity 32 Gbit NAND FLASH architecture with a parallel interface and defined timing to support designs that demand persistent, board-mounted memory. Its electrical and mechanical specifications—2.7 V–3.6 V supply, 83 MHz clock, and 48-TSOP I package—make it suitable for systems where form factor and predictable interface timing are important.

This device is appropriate for design teams and procurement seeking a compact, high-capacity parallel FLASH solution for commercial-temperature applications, offering straightforward integration on 48-TSOP I footprints and compatibility with common 3.0 V system supplies.

Request a quote or contact sales to discuss availability, lead times, and pricing for the MT29F32G08CBADBWP-12:D TR.