MT29F32G08CBADAWP:D

The MT29F32G08CBADAWP:D is a 32 Gbit parallel NAND flash memory device. It provides non-volatile FLASH storage organized as 4G × 8 and is supplied in a 48‑TSOP I package.

Designed for systems requiring parallel flash memory with a standard 2.7 V to 3.6 V supply and an operating temperature range of 0°C to 70°C, it supports compact board-level integration where a 48‑pin TSOP I footprint is required.

Key Features

• Memory Technology NAND FLASH non-volatile memory providing block/array storage in a FLASH format.
• Density & Organization 32 Gbit capacity organized as 4G × 8 to support high-density storage requirements.
• Interface Parallel memory interface for system designs that use parallel FLASH connectivity.
• Power Single supply operation with a voltage range of 2.7 V to 3.6 V, suitable for common 3.0 V system rails.
• Package 48‑TFSOP / 48‑TSOP I package (0.724" / 18.40 mm width) for soldered, board-mounted implementations.
• Operating Temperature Specified for 0°C to 70°C (TA) operating range for ambient temperature environments.
• Mounting Type Non-volatile mounting suitable for permanent assembly into target systems.

Typical Applications

• Embedded Storage Parallel NAND FLASH storage for systems that require 32 Gbit non-volatile memory in a 48‑pin TSOP I footprint.
• Firmware and Code Storage On-board storage of firmware or boot code where parallel FLASH memory and the specified voltage range are required.
• System Memory Expansion Integration into electronic designs needing additional non-volatile capacity with a parallel interface and compact package.
• Appliances and Commercial Electronics Use in devices operating within 0°C to 70°C that require soldered NAND FLASH memory in a standard 48‑TSOP I package.

Unique Advantages

• High-density 32 Gbit capacity: Provides large non-volatile storage in a single device using a 4G × 8 organization.
• Parallel interface: Enables direct parallel connectivity for systems designed around parallel FLASH memory access.
• Standard 2.7 V–3.6 V supply: Compatible with common 3.0 V system rails without requiring specialized power supplies.
• Compact 48‑TSOP I package: 48‑pin TFSOP (0.724", 18.40 mm width) package for space-conscious board layouts.
• Specified commercial temperature range: Rated for operation from 0°C to 70°C for ambient-temperature applications.

Why Choose MT29F32G08CBADAWP:D?

The MT29F32G08CBADAWP:D positions itself as a straightforward, high-density parallel NAND flash option for designs that require 32 Gbit of non-volatile storage in a 48‑pin TSOP I package. Its 4G × 8 memory organization, parallel interface, and standard 2.7 V–3.6 V supply make it suitable for systems designed around parallel FLASH memory and standard power rails.

This device is appropriate for engineers and procurement teams specifying soldered, board-mounted FLASH memory for applications operating within the 0°C to 70°C ambient range, offering a compact package and clear electrical and thermal limits for integration into commercial electronic products.

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