MT29F32G08CBADAWP-M:D TR
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 42 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBADAWP-M:D TR – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08CBADAWP-M:D TR is a 32 Gbit non-volatile FLASH NAND memory device organized as 4G × 8. It provides parallel memory access and is supplied in a 48-TSOP I package.
Designed for designs that require high-density parallel FLASH storage, the device offers a 2.7 V to 3.6 V supply range and an ambient operating temperature range of 0°C to 70°C, enabling straightforward integration into systems that use parallel NAND memory.
Key Features
- Memory Type & Technology Non-volatile FLASH using NAND architecture for persistent data storage.
- Density & Organization 32 Gbit capacity organized as 4G × 8 to support larger data and firmware images.
- Interface Parallel memory interface for direct parallel access to stored data.
- Supply Voltage Operates from 2.7 V to 3.6 V, accommodating typical 3.0 V system rails.
- Package Supplied in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) package for surface-mount PCB assembly.
- Operating Temperature Specified ambient range of 0°C to 70°C (TA) for standard commercial environments.
Typical Applications
- Embedded Storage Parallel FLASH storage for embedded systems requiring non-volatile memory capacity.
- Firmware and Code Storage Retains boot code and firmware images where 32 Gbit capacity and parallel access are needed.
- Data Logging and File Storage Stores larger datasets or file blocks in systems that use parallel NAND memory interfaces.
Unique Advantages
- High-capacity 32 Gbit Provides significant on-board non-volatile storage for large firmware images and datasets.
- Parallel interface for direct integration Parallel access simplifies integration with controllers and legacy parallel memory buses.
- Flexible supply voltage 2.7 V to 3.6 V range supports common 3.0 V system rails for straightforward power management.
- Standard TSOP package 48-TSOP I package (48-TFSOP, 0.724", 18.40 mm width) eases PCB layout and assembly in surface-mount designs.
- Commercial temperature rating Specified for 0°C to 70°C ambient operation for general commercial applications.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08CBADAWP-M:D TR positions itself as a high-density parallel NAND FLASH memory option that balances capacity, supply flexibility, and a standard surface-mount package. Its 32 Gbit organization and parallel interface make it suitable for designs that need persistent storage with direct parallel access.
This device is appropriate for engineers and procurement teams building systems that require non-volatile FLASH memory within the specified voltage and temperature ranges, offering a clear hardware footprint in a 48-TSOP I package for straightforward PCB implementation.
Request a quote or submit a product inquiry to obtain pricing and availability for the MT29F32G08CBADAWP-M:D TR.
