MT29F32G08CBACAWP:C TR

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 589 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08CBACAWP:C TR – IC FLASH 32Gbit Parallel NAND, 48-TSOP I

The MT29F32G08CBACAWP:C TR is a 32 Gbit non-volatile FLASH memory device using NAND technology with a parallel memory interface. It is organized as 4G × 8 and supplied in a 48-TFSOP / 48-TSOP I package for board-level mounting.

This device is intended for designs that require parallel NAND flash storage with a 2.7 V to 3.6 V supply range and an ambient operating temperature range of 0°C to 70°C.

Key Features

  • Memory Type & Technology  Non-volatile FLASH memory based on NAND technology for persistent storage.
  • Capacity & Organization  32 Gbit total capacity arranged as 4G × 8, providing high-density storage in a single device.
  • Interface  Parallel memory interface suitable for systems that use parallel NAND connectivity.
  • Voltage Supply  Operating supply range from 2.7 V to 3.6 V for compatibility with 3 V system rails.
  • Package  48-TFSOP package (0.724", 18.40 mm width) specified as 48-TSOP I for standard TSOP assembly.
  • Operating Temperature  Ambient temperature rating of 0°C to 70°C (TA) for standard commercial-temperature applications.
  • Memory Format  FLASH memory format with explicit parallel interface and 4G × 8 organization for predictable integration.

Typical Applications

  • Embedded systems  Parallel NAND flash storage for embedded designs that require non-volatile code or data storage in a TSOP form factor.
  • Consumer electronics  High-density 32 Gbit FLASH for devices that integrate parallel memory interfaces and 3 V power domains.
  • Industrial equipment  Non-volatile storage in equipment operating within a 0°C to 70°C ambient range where parallel flash is specified.

Unique Advantages

  • High density 32 Gbit capacity: Supports large storage requirements within a single device footprint.
  • Standard 4G × 8 organization: Predictable memory geometry for designs that reference byte-wide NAND layouts.
  • Parallel interface: Enables integration with systems using parallel NAND connectivity without serial-to-parallel conversion.
  • Wide 2.7 V to 3.6 V supply range: Compatible with common 3 V system rails for straightforward power integration.
  • Compact 48-TSOP I package: Industry-standard TSOP footprint (48-TFSOP, 18.40 mm width) for board-level placement and routing.
  • Commercial temperature rating: Operates across 0°C to 70°C for typical commercial applications.

Why Choose IC FLASH 32GBIT PAR 48TSOP I?

The MT29F32G08CBACAWP:C TR positions itself as a straightforward, high-density parallel NAND FLASH device for designs that require 32 Gbit of non-volatile storage in a 48-TSOP I package. Its 4G × 8 organization, parallel interface, and 2.7 V to 3.6 V supply range make it suitable for implementations that need predictable memory geometry and standard 3 V power compatibility within a 0°C to 70°C ambient range.

This device is appropriate for engineers and procurement teams specifying parallel NAND flash in embedded, consumer, or industrial applications where the listed electrical, thermal, and mechanical characteristics align with system requirements.

Request a quote or contact sales to obtain pricing, lead time, and availability for MT29F32G08CBACAWP:C TR.

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