MT29F32G08CBACAWP-ITZ:C TR

The MT29F32G08CBACAWP-ITZ:C TR is a 32 Gbit non-volatile memory device implemented as NAND FLASH with a parallel memory interface. It is organized as 4G × 8 and supplied in a 48-TSOP I package (48-TFSOP, 0.724" / 18.40 mm width).

Key electrical and environmental characteristics include a supply voltage range of 2.7 V to 3.6 V and an ambient operating temperature range of -40°C to 85°C, making the device suitable for systems that require parallel FLASH storage in a compact TSOP I footprint.

Key Features

• Memory Type & Density 32 Gbit NAND FLASH organized as 4G × 8 for high-density non-volatile storage.
• Interface Parallel memory interface for integration with parallel bus designs.
• Voltage Supply Operates from 2.7 V to 3.6 V, compatible with common 3.3 V systems.
• Package 48-TSOP I (48-TFSOP) package with a width of 0.724" (18.40 mm) for compact board implementation.
• Memory Format FLASH – NAND non-volatile memory format.
• Operating Temperature Rated for ambient operation from -40°C to 85°C (TA).
• Mounting & Case Surface-mount 48-TFSOP package suitable for automated PCB assembly.

Typical Applications

• Embedded storage systems — Devices and modules that require 32 Gbit of non-volatile NAND FLASH with a parallel interface for data or code storage.
• Industrial electronics — Systems that operate across -40°C to 85°C and need a compact 48-TSOP I packaged FLASH solution.
• Firmware and code storage — Platforms that use parallel FLASH memory organized as 4G × 8 for storing firmware, boot code, or large static data.

Unique Advantages

• High-density storage: 32 Gbit capacity provides substantial non-volatile storage in a single device.
• Parallel interface support: Designed for systems using parallel memory buses, enabling straightforward integration with compatible controllers.
• Wide voltage compatibility: 2.7 V to 3.6 V supply range fits common 3.3 V system rails.
• Compact TSOP I package: 48-TSOP I (0.724", 18.40 mm) package minimizes PCB area while supporting surface-mount assembly.
• Extended ambient temperature range: -40°C to 85°C rating addresses a broad range of environmental conditions.
• Standard NAND FLASH format: FLASH – NAND organization (4G × 8) for predictable memory planning and allocation.

Why Choose MT29F32G08CBACAWP-ITZ:C TR?

The MT29F32G08CBACAWP-ITZ:C TR positions itself as a straightforward, high-density parallel NAND FLASH device for designs that require 32 Gbit of non-volatile storage in a compact TSOP I package. Its electrical and thermal specifications — including a 2.7 V to 3.6 V supply range and -40°C to 85°C operating temperature — make it suitable for systems that need robust ambient-range operation without changing board-level footprint standards.

This device is appropriate for engineers and procurement teams specifying parallel FLASH memory where package form factor, memory organization (4G × 8), and supply voltage compatibility are primary selection criteria. The combination of density, standard package, and operating range supports long-term integration into products that rely on parallel NAND FLASH resources.

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