MT29F32G08CBACAL73A3WC1PV
| Part Description |
IC FLASH 32GBIT PARALLEL DIE |
|---|---|
| Quantity | 314 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 1 (Unlimited) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08CBACAL73A3WC1PV – IC FLASH 32Gbit Parallel Die
The MT29F32G08CBACAL73A3WC1PV is a 32 Gbit non-volatile NAND flash memory provided as a die. It features a 4G × 8 memory organization with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.
Designed for die-level integration, this NAND flash product targets designs that require on-die flash storage with defined operating temperature and supply ranges, enabling integration into custom packages or module-level assemblies.
Key Features
- Memory Type & Technology Non-volatile FLASH – NAND memory technology delivering a total capacity of 32 Gbit in a 4G × 8 organization.
- Memory Interface Parallel memory interface for die-level integration and direct parallel access.
- Voltage Supply Operates across a 2.7 V to 3.6 V supply range to support common system power rails.
- Package Supplied as a die (Supplier Device Package: Die) for direct integration into custom assemblies or multi-die packages.
- Operating Temperature Specified for 0°C to 70°C (TA), suitable for standard commercial temperature environments.
- Manufacturer Device manufactured by Micron Technology Inc.
Unique Advantages
- Die-level integration: Enables direct placement into custom packages or mixed-die assemblies for compact or customized system designs.
- Large NAND capacity: 32 Gbit density in a 4G × 8 organization provides substantial on-die storage for firmware, data logging, or code shadowing.
- Flexible supply range: 2.7 V to 3.6 V operation aligns with common system rails, simplifying power-supply design.
- Parallel interface: Parallel memory access supports designs that require straightforward bus integration at the die level.
- Commercial temperature support: Rated 0°C to 70°C for standard commercial applications and environments.
Why Choose MT29F32G08CBACAL73A3WC1PV?
The MT29F32G08CBACAL73A3WC1PV combines 32 Gbit NAND flash density with a parallel interface and die-level packaging to meet integration needs where custom assembly or multi-die layouts are required. Its 2.7 V to 3.6 V supply range and 0°C to 70°C operating window make it suitable for commercial designs that require on-die non-volatile storage.
Manufactured by Micron Technology Inc., this part is intended for engineers and designers who need a die-form NAND flash solution with clear electrical and environmental specifications for incorporation into larger assemblies or specialized packages.
Request a quote or submit an inquiry to discuss availability, pricing, and integration options for MT29F32G08CBACAL73A3WC1PV.
