MT29F32G08AFACAWP:C

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 250 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08AFACAWP:C – IC FLASH 32GBIT PAR 48TSOP I

The MT29F32G08AFACAWP:C is a 32 Gbit parallel NAND flash memory device based on SLC NAND architecture. It provides non-volatile storage in a 48‑TSOP I package and is designed for applications requiring high-density, byte-wide NAND storage with commercial temperature operation.

Device features include ONFI-compliant asynchronous and synchronous I/O modes, hardware data strobe support, and a supply voltage range of 2.7 V to 3.6 V, making it suitable for embedded systems and consumer devices that need reliable, high-density flash memory.

Key Features

  • Core Technology  Single-level cell (SLC) NAND flash memory providing non-volatile storage.
  • Memory Capacity & Organization  32 Gbit total capacity organized as 4G × 8. Device-level organization includes a page size (x8) of 8,640 bytes (8,192 + 448), block size of 128 pages (1,024K + 56K bytes), and 2 planes × 2,048 blocks per plane (32Gb = 4,096 blocks).
  • Interface Options  Parallel NAND interface with support for both asynchronous and synchronous operation; ONFI 2.2-compliant signaling and DQS data strobe support for hardware synchronization.
  • Performance Characteristics  Asynchronous throughput up to 50 MT/s per pin; synchronous operation supports up to timing mode 5 with read/write throughput up to 200 MT/s per pin. Typical array timings: read page ~35 µs, program page ~350 µs, erase block ~1.5 ms.
  • Power  Operating voltage VCC = 2.7–3.6 V. Device supports VCCQ options of 1.7–1.95 V or 2.7–3.6 V as documented in the product family specification.
  • Endurance & Reliability  Specified endurance of 80,000 program/erase cycles and data retention compliant with JESD47G as noted in the datasheet.
  • Package & Temperature  Supplied in a 48‑TSOP (48‑TFSOP, 0.724", 18.40 mm width) package and rated for commercial operating temperature of 0 °C to +70 °C.
  • Command & Operation Support  ONFI NAND Flash protocol command set with advanced commands including program/read caches, multi-plane commands, copyback, read unique ID, OTP mode, and operation status reporting for software detection of completion and pass/fail conditions.

Typical Applications

  • Embedded Storage: Used as primary non-volatile storage for embedded systems that require high-density, byte-wide NAND memory for code and data retention.
  • Consumer Electronics: Provides mass storage for commercial consumer devices that operate within the specified 0 °C to 70 °C temperature range.
  • Firmware & Boot Code Storage: Suitable for storing firmware, bootloaders and system images where SLC endurance and reliability are required.
  • Data Buffering and Temporary Storage: Employed where fast synchronous/asynchronous transfers and hardware data-strobe synchronization improve throughput and timing control.

Unique Advantages

  • High-density SLC NAND: 32 Gbit capacity in a single 48‑TSOP package reduces PCB area and simplifies board-level BOM compared to multiple lower-density devices.
  • Flexible Interface Modes: ONFI 2.2 compliance with both asynchronous and synchronous modes and DQS support allows designers to select the timing mode that matches system throughput requirements.
  • Proven Endurance: Rated for 80,000 program/erase cycles, delivering predictable lifecycle characteristics for firmware-intensive applications.
  • Hardware and Software Status Methods: Operation status byte and DQS hardware strobes provide both software and hardware mechanisms to detect operation completion and synchronize data transfers.
  • Commercial Temperature Rating: Specified operation from 0 °C to +70 °C for use in a wide range of consumer and commercial products.

Why Choose MT29F32G08AFACAWP:C?

The MT29F32G08AFACAWP:C combines 32 Gbit SLC NAND density with flexible ONFI‑compliant parallel interfaces and hardware data-strobe support to meet the needs of designers requiring reliable, high-density non-volatile storage in a compact 48‑TSOP package. Its documented endurance, data-retention compliance, and family-level performance characteristics support robust firmware and data storage implementations.

This device is well suited to engineers building commercial-temperature embedded and consumer systems that demand predictable program/erase endurance, multiple I/O timing options, and a standard package form factor for streamlined PCB integration and supply-chain management.

Request a quote or contact sales to discuss availability, pricing, and technical support for the MT29F32G08AFACAWP:C.

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