MT29F32G08CBACAL73A3WC1L

The MT29F32G08CBACAL73A3WC1L is a 32 Gbit parallel NAND flash memory die using multi-level cell (MLC) technology. It provides a 4G × 8 memory organization with parallel interface access for integration into die-level assemblies and custom packages.

Designed for non-volatile data storage, the device offers 20 ns access and write-cycle timing characteristics and operates from a 2.7 V to 3.6 V supply within an ambient temperature range of 0°C to 70°C.

Key Features

• Memory Core and Format MLC NAND flash memory with a 4G × 8 organization and a total capacity of 32 Gbit, provided as a raw die.
• Interface Parallel memory interface for direct parallel data transfers and integration into parallel NAND architectures.
• Performance Access time of 20 ns and a write-cycle time (word/page) of 20 ns, supporting timely read and program operations.
• Power Operates from a single supply range of 2.7 V to 3.6 V, enabling use in systems with common flash voltage rails.
• Package and Mounting Supplied as a die for direct integration into custom packages or module-level assemblies.
• Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).

Typical Applications

• Embedded Storage — Provides non-volatile parallel NAND storage for embedded systems requiring 32 Gbit density in die form.
• Module and Package Integration — Intended for use in custom module builds where a raw die is bonded into a target package or system-in-package solution.
• Data Retention and Program Storage — Suited for designs that implement program code or data storage using parallel NAND flash with MLC technology.

Unique Advantages

• High Density in Die Form: 32 Gbit capacity offered as a raw die enables compact, high-capacity integration into custom assemblies.
• Parallel Interface Throughput: Parallel memory organization (4G × 8) supports direct parallel data access for compatible controller architectures.
• Fast Access and Write Timing: 20 ns access and write-cycle timing support responsive program and read operations where timing is a design consideration.
• Flexible Power Range: 2.7 V to 3.6 V supply compatibility allows use across common flash voltage domains.
• Die-Level Integration: Supplied as a die to enable custom packaging, direct bonding, or system-in-package implementations.

Why Choose MT29F32G08CBACAL73A3WC1L?

The MT29F32G08CBACAL73A3WC1L positions itself as a high-density MLC NAND flash die for designs that require 32 Gbit of non-volatile parallel storage with 20 ns access and write timing. Its die form factor and parallel interface make it suitable for custom package integration and module-level solutions where component-level control is required.

Manufactured by Micron Technology Inc., this component is appropriate for engineering teams and OEMs seeking a raw NAND flash die with defined voltage and temperature specifications for long-term integration into specialized assemblies.

Request a quote or contact sales to discuss availability, pricing, and integration details for the MT29F32G08CBACAL73A3WC1L.