MT29F32G08AFACAWP-ITZ:C TR

IC FLASH 32GBIT PAR 48TSOP I
Part Description

IC FLASH 32GBIT PAR 48TSOP I

Quantity 176 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08AFACAWP-ITZ:C TR – IC FLASH 32GBIT PAR 48TSOP I

The MT29F32G08AFACAWP-ITZ:C TR is a 32 Gbit non-volatile NAND flash memory device in a 48‑TSOP I package with a parallel interface. It implements asynchronous and synchronous NAND architectures with ONFI 2.2-compliant features and is offered for systems that require high-capacity, parallel flash storage.

Designed for industrial temperature operation (–40°C to +85°C) and a 2.7 V to 3.6 V supply range, this device targets embedded and industrial storage applications requiring robust endurance and established NAND command support.

Key Features

  • Memory Type & Capacity 32 Gbit NAND flash organized as 4G × 8; non-volatile storage suitable for persistent data retention.
  • Technology & Cell Type FLASH - NAND device family with single-level cell (SLC) technology referenced in the device family documentation.
  • Interface & Protocol Parallel memory interface with ONFI 2.2-compliant command set and support for asynchronous and synchronous I/O modes.
  • Performance (I/O) Synchronous timing up to mode 5 with read/write throughput per pin up to 200 MT/s (DDR); asynchronous throughput up to 50 MT/s.
  • Array & Block Structure Page size (×8) of 8,640 bytes (8,192 + 448), blocks of 128 pages, and 2 planes with 2,048 blocks per plane; the 32Gb device contains 4,096 blocks.
  • Typical Operation Latencies Read page up to 35 µs (max), program page typically 350 µs, erase block typically 1.5 ms.
  • Endurance & Data Retention Program/erase endurance documented at 80,000 cycles with JESD47G-compliant data retention references in the qualification notes.
  • Voltage & Power Operating voltage range VCC: 2.7–3.6 V; VCCQ supported at 1.7–1.95 V or 2.7–3.6 V depending on configuration.
  • Advanced Command Support Supports program cache, read cache (sequential and random), multi-plane/multi-LUN commands, copyback, OTP mode, and read unique ID functions as documented.
  • Package & Temperature 48‑TSOP I package (48‑TFSOP; 18.40 mm width) rated for industrial ambient operation from –40°C to +85°C.

Typical Applications

  • Industrial Storage Systems Persistent data storage in industrial controllers and instrumentation that require operation across –40°C to +85°C.
  • Embedded Systems Code and data storage for embedded platforms using a parallel NAND interface and requiring large-capacity non-volatile memory.
  • Flash-Based Memory Subsystems Use in custom memory modules or board-level designs where block-level NAND operations, multi-plane commands, and high endurance are needed.

Unique Advantages

  • Industrial Temperature Range: Specified for –40°C to +85°C operation, enabling deployment in temperature-challenging environments.
  • High Endurance: Documented endurance of 80,000 program/erase cycles supports applications with frequent write/erase activity.
  • Flexible I/O Modes: Both asynchronous and synchronous operation with up to ONFI timing mode 5 allows designers to choose performance vs. interface complexity.
  • ONFI 2.2 Compliance: Standardized command set and timing support improve interoperability with NAND controllers that implement ONFI.
  • Large Page and Block Architecture: 8,640‑byte pages and 128‑page blocks with multi-plane support facilitate efficient large-block data transfers and maintenance operations.
  • Compact Board-Level Footprint: Available in a 48‑TSOP I package (48‑TFSOP) for board designs where a small, standardized package is required.

Why Choose MT29F32G08AFACAWP-ITZ:C TR?

The MT29F32G08AFACAWP-ITZ:C TR combines a 32 Gbit NAND architecture with ONFI 2.2-compliant synchronous and asynchronous interfaces, making it suitable for embedded and industrial storage designs that require a parallel NAND solution. Its documented endurance, block/page geometry and advanced command support allow designers to implement robust data-management strategies tailored to application needs.

This device is appropriate for engineers seeking a high-capacity parallel NAND memory in a 48‑TSOP I package with industrial temperature capability, standard ONFI protocol support, and documented performance figures for read, program and erase operations.

Request a quote or submit an inquiry for pricing and availability, specifying the MT29F32G08AFACAWP-ITZ:C TR part number and your required quantities and lead time.

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