MT29F32G08AFACAWP-IT:C TR
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 472 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08AFACAWP-IT:C TR – 32Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F32G08AFACAWP-IT:C TR is a 32 Gbit NAND flash memory device implemented with SLC (single-level cell) technology and a parallel memory interface. It provides non-volatile storage in a 48‑TSOP I package and supports both asynchronous and synchronous I/O modes compliant with ONFI 2.2.
This device targets embedded and industrial applications that require durable non-volatile storage with flexible performance modes, broad operating voltage support, and an industrial temperature range of −40°C to +85°C.
Key Features
- Memory Core 32 Gbit capacity organized as 4G × 8 (4096 blocks for the 32Gb device); single-level cell (SLC) NAND technology for endurance and retention characteristics documented in the datasheet.
- Organization & Geometry Page size (x8): 8,640 bytes (8,192 + 448). Block size: 128 pages. Plane structure: 2 planes × 2,048 blocks per plane.
- Interface & Protocol Parallel memory interface with ONFI 2.2 compliance; supports synchronous I/O (DQS data strobe) and asynchronous I/O modes with the ONFI NAND Flash Protocol command set.
- Performance Synchronous operation up to timing mode 5 with DDR clocking (10 ns clock, up to 200 MT/s read/write throughput per pin). Asynchronous operation up to timing mode 5 with up to 50 MT/s per pin.
- Array Timing Typical array timing: read page 35 μs (max), program page ~350 μs (typ), erase block ~1.5 ms (typ).
- Advanced Command Set Program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane commands, multi-LUN operations, read unique ID, and copyback support.
- Endurance & Reliability Program/erase endurance: 80,000 cycles; data retention and qualification details provided in the device documentation.
- Power Operating voltage (VCC): 2.7 V to 3.6 V. VCCQ options: 1.7–1.95 V or 2.7–3.6 V as specified in the datasheet.
- Package & Temperature 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width) and industrial operating temperature range of −40°C to +85°C (TA).
Typical Applications
- Industrial Embedded Systems Non-volatile storage for control firmware and data in systems requiring an industrial temperature range (−40°C to +85°C).
- Boot and Firmware Storage Reliable SLC NAND for boot images and firmware where endurance and data retention are important.
- High‑Performance Read/Write Storage Synchronous I/O and DQS support provide enhanced read/write throughput for applications that benefit from fast page transfers.
- Data Logging and Operational Memory Large page and block architecture with advanced commands supports efficient sequential and random data operations.
Unique Advantages
- Industrial temperature support: Rated for −40°C to +85°C, enabling deployment in temperature‑sensitive industrial environments.
- SLC endurance: 80,000 program/erase cycles for robustness in repeated-write applications.
- Flexible interface modes: ONFI 2.2 compliance with both asynchronous and synchronous modes (DQS), allowing designers to select performance vs. timing complexity.
- Large page/block architecture: 8,640‑byte pages and 128‑page blocks optimize bulk data transfers and reduce management overhead for large sequential writes and reads.
- Advanced command feature set: Program/read caches, OTP, multi‑plane/multi‑LUN and copyback operations support advanced flash management and system-level optimization.
- Wide supply range: VCC from 2.7 V to 3.6 V with VCCQ options to match system signaling requirements.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08AFACAWP-IT:C TR combines SLC NAND architecture, ONFI 2.2 protocol support, and an industrial temperature rating to deliver a durable, flexible non-volatile memory option for embedded designs. Its mix of synchronous and asynchronous operation modes, advanced command capabilities, and documented endurance make it suitable for systems that require reliable storage with defined performance characteristics.
This device is well suited to designers and engineers specifying industrial-grade embedded storage for firmware, system boot, data logging, and other applications where long-term availability, standardized interface support, and robust endurance are required.
Request a quote or submit a request for pricing and lead-time information to evaluate MT29F32G08AFACAWP-IT:C TR for your next design.
