MT29F32G08AFABAWP-IT:B TR
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 34 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08AFABAWP-IT:B TR – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08AFABAWP-IT:B TR is a 32 Gbit parallel NAND flash memory device implemented in FLASH (NAND) technology with a 4G x 8 memory organization. It provides both asynchronous and synchronous I/O modes and is offered in a 48‑TSOP I package targeted at industrial temperature operation.
Designed for embedded and industrial storage applications, this non-volatile memory delivers high density, selectable synchronous/asynchronous performance modes, and industrial-grade operating temperature support for use in systems that require robust solid-state storage.
Key Features
- Memory Core 32 Gbit NAND flash organized as 4G x 8 with device-specific block and page architecture (page size x8: 8,640 bytes; block size: 128 pages; plane architecture: 2 planes).
- Technology FLASH — NAND memory with Single-Level Cell (SLC) technology as documented in the device feature set.
- Interface & Protocol Parallel memory interface supporting asynchronous and synchronous I/O; ONFI 2.2-compliant command set and data strobe (DQS) support for synchronous operation.
- Performance Synchronous timing to mode 5 with read/write throughput per pin up to 200 MT/s (synchronous) and up to 50 MT/s (asynchronous). Typical array operations include read page (35 µs max), program page (~350 µs typical), and erase block (~1.5 ms typical).
- Voltage & Power Operating VCC range: 2.7 V to 3.6 V. VCCQ options include 1.7–1.95 V or 2.7–3.6 V per datasheet specifications.
- Reliability & Endurance Endurance rated at 80,000 program/erase cycles with data retention per JESD47G compliance as noted in the datasheet.
- Operating Temperature Industrial temperature range: –40 °C to +85 °C (TA), appropriate for elevated-ambient and industrial environments.
- Package Available in a 48‑TSOP I package (48‑TFSOP, 0.724" / 18.40 mm width) suitable for surface-mount board designs.
Typical Applications
- Industrial Control Systems Non-volatile storage for firmware, logging, and configuration data in controllers and automation equipment that require industrial temperature operation.
- Embedded Storage High-density NAND storage for embedded platforms and appliances where parallel flash and selectable synchronous/asynchronous operation are required.
- Networking & Storage Appliances Local firmware and data storage in networking gear and storage controllers benefiting from high endurance and defined program/erase characteristics.
Unique Advantages
- High-density 32 Gbit capacity: Provides substantial non-volatile storage in a single 48‑pin TSOP package to minimize board space and BOM count.
- Flexible I/O modes: Supports both asynchronous and synchronous interfaces (ONFI 2.2), enabling designers to match performance and timing requirements.
- Industrial temperature support: –40 °C to +85 °C rating accommodates a wide range of harsh-environment applications.
- Documented endurance and retention: 80,000 program/erase cycles and JESD47G-compliant retention information help quantify lifetime and reliability.
- Deterministic array timings: Published read, program, and erase latencies provide predictable behavior for system-level design and scheduling.
- Standard TSOP form factor: 48‑TSOP I package simplifies integration into existing PCB footprints and assembly flows.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08AFABAWP-IT:B TR is positioned as a high-density parallel NAND flash solution for industrial and embedded systems that require a combination of capacity, endurance, and flexible interface options. Its synchronous and asynchronous operating modes, ONFI 2.2 support, and documented timing parameters make it suitable for designs that need predictable storage performance.
This device is well suited to engineers and procurement teams specifying non-volatile storage for industrial controllers, embedded appliances, and networking/storage equipment where industrial temperature operation, proven program/erase endurance, and a standard 48‑TSOP package are required. Backed by Micron documentation, the device provides verifiable electrical, timing, and reliability data for design and qualification.
Request a quote or contact sales to discuss availability, pricing, and technical details for the MT29F32G08AFABAWP-IT:B TR.
