MT29F32G08AFACAWP-IT:C
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,858 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08AFACAWP-IT:C – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08AFACAWP-IT:C from Micron Technology Inc. is a 32 Gbit parallel NAND flash memory device in a 48-pin TSOP I package. It implements NAND FLASH technology with a 4G × 8 memory organization and supports both asynchronous and synchronous I/O modes.
Designed for embedded storage in systems that require industrial temperature operation and standard parallel NAND interfaces, the device offers flexible command support and performance scaling through asynchronous and synchronous timing modes.
Key Features
- Memory Type & Density 32 Gbit NAND flash organized as 4G × 8 (device size with 4,096 blocks for the 32Gb device).
- NAND Technology & Standards Single-level cell (SLC) NAND; ONFI 2.2-compliant interface support as documented in the datasheet.
- Performance (Synchronous & Asynchronous) Synchronous operation up to timing mode 5 with a DDR clock rate of 10 ns and read/write throughput up to 200 MT/s per pin; asynchronous operation up to timing mode 5 with throughput up to 50 MT/s per pin. Typical array timings: read page 35 μs (max), program page 350 μs (typ), erase block 1.5 ms (typ).
- Memory Architecture Page size (x8) 8,640 bytes (8,192 + 448), block size 128 pages (1,024K + 56K bytes), plane configuration: 2 planes × 2,048 blocks per plane.
- Interface & Command Set Parallel memory interface with an advanced command set including program cache, read cache (sequential and random), OTP mode, multi-plane commands, multi-LUN operations, read unique ID, and copyback. RESET (FFh) is required as the first command after power-on; operation status byte and DQS signals provide status and data synchronization methods.
- Power & Voltage Operating voltage ranges: VCC 2.7–3.6 V and VCCQ options 1.7–1.95 V or 2.7–3.6 V as specified.
- Endurance & Retention Rated endurance of 80,000 program/erase cycles with data retention compliant to JESD47G per the datasheet qualification notes.
- Package & Temperature 48-TFSOP / 48-TSOP I package (0.724", 18.40 mm width) with industrial operating temperature range −40 °C to +85 °C (TA).
Unique Advantages
- High-density storage in a compact TSOP package: 32 Gbit capacity in a 48-pin TSOP I package supports space-constrained board layouts.
- Flexible performance modes: Support for both synchronous (up to DDR timing mode 5) and asynchronous timing modes lets designers balance throughput and system timing requirements.
- Advanced NAND commands: Program/read caches, multi-plane and multi-LUN operations, OTP mode, and copyback provide system-level flexibility for firmware and storage management.
- Industrial temperature range: Specified operation from −40 °C to +85 °C for use in temperature-demanding environments.
- Documented endurance and retention: 80,000 program/erase cycles and JESD47G data retention references support reliability planning and BOM qualification.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08AFACAWP-IT:C targets designs that require reliable, high-density parallel NAND storage with industrial temperature capability and a compact TSOP footprint. Its mix of synchronous and asynchronous I/O modes, along with advanced command support, allows system designers to implement flexible firmware and performance profiles while maintaining standard parallel interface connectivity.
For customers needing documented endurance and data retention alongside a wide operating voltage range and industrial temperature rating, this Micron NAND device provides a verifiable specification set for embedded storage integration and long-term deployment considerations.
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