MT29F32G08AFABAWP-IT:B
| Part Description |
IC FLASH 32GBIT PAR 48TSOP I |
|---|---|
| Quantity | 202 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08AFABAWP-IT:B – IC FLASH 32GBIT PAR 48TSOP I
The MT29F32G08AFABAWP-IT:B is a 32 Gbit NAND flash memory device in a 48-pin TSOP I package with a parallel memory interface. It is based on SLC NAND architecture and is designed for embedded and industrial applications requiring non-volatile storage with configurable synchronous and asynchronous I/O modes.
Key value propositions include support for ONFI 2.2-compliant signaling, multi-plane and cache programming/read features for improved throughput, and an industrial operating temperature range for deployment in temperature-sensitive systems.
Key Features
- Memory Type & Organization 32 Gbit NAND flash organized as 4G × 8 (device-level organization: 4096 blocks for 32Gb). Page and block geometry includes a page size (x8) of 8640 bytes (8192 + 448) and blocks of 128 pages.
- SLC NAND Technology Single-level cell (SLC) NAND provides endurance characteristics specified in the datasheet.
- Interface Modes Supports both asynchronous and synchronous I/O with ONFI 2.2 compliance. Synchronous operation offers up to 200 MT/s read/write throughput per pin; asynchronous operation supports up to 50 MT/s per pin.
- Performance Metrics Typical array timings include read page: 35 μs (max), program page: 350 μs (typ), and erase block: 1.5 ms (typ).
- Advanced Command Set Supports program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback, read unique ID and an OTP mode for one-time programmable data.
- Endurance & Reliability Endurance is specified at 80,000 program/erase cycles; data retention and qualification references are provided in the datasheet.
- Voltage & Power Operating voltage range VCC: 2.7–3.6 V. VCCQ options include 1.7–1.95 V and 2.7–3.6 V to support different I/O voltage domains.
- Package & Mounting Supplied in a 48-TFSOP / 48-TSOP I package (0.724", 18.40 mm width), suitable for PCB-mounted applications requiring a TSOP form factor.
- Operating Temperature Industrial temperature grade: –40 °C to +85 °C (TA), for use in a wide range of environmental conditions.
- Hardware Synchronization Data strobe (DQS) signals available in synchronous interface modes to synchronize DQ data.
Typical Applications
- Industrial Control Systems Non-volatile program and data storage for controllers and automation equipment operating across –40 °C to +85 °C.
- Embedded Storage Local mass storage for embedded devices requiring SLC endurance and NAND command-set features such as cache programming and copyback.
- Data Logging Reliable write/erase cycling and OTP capability for logged data or device-specific configuration storage.
- Networking & Communications Equipment Firmware and configuration storage where parallel interface and selectable VCCQ options support diverse system designs.
Unique Advantages
- ONFI 2.2 Compatibility: Enables standardized synchronous and asynchronous timing modes to support interoperability with host controllers that implement ONFI.
- SLC Endurance: 80,000 program/erase cycles provide a defined endurance profile suitable for applications requiring high P/E cycle counts.
- Flexible I/O Voltages: VCC and VCCQ ranges (2.7–3.6 V and 1.7–1.95 V / 2.7–3.6 V respectively) let designers adapt the device to different system voltage domains.
- Throughput Options: Support for synchronous operation up to 200 MT/s per pin and asynchronous operation up to 50 MT/s per pin allows designers to balance throughput and compatibility.
- Advanced NAND Features: Program/read caches, multi-plane and multi-LUN commands, and copyback reduce host overhead and can improve effective throughput in multi-block operations.
- Industrial Temperature Range: Specified operation from –40 °C to +85 °C enables deployment in temperature-challenging environments.
Why Choose IC FLASH 32GBIT PAR 48TSOP I?
The MT29F32G08AFABAWP-IT:B combines SLC NAND architecture, a parallel interface, ONFI 2.2-compliant signaling, and a TSOP I package to deliver a durable, industrial-temperature non-volatile memory option. Its documented endurance, supported command set, and flexible voltage options make it suitable for embedded systems that require predictable endurance and advanced NAND features.
This device is appropriate for engineers designing industrial controllers, embedded storage systems, data loggers, and networking equipment that need robust, field-proven NAND behavior with clear electrical and timing specifications. The combination of performance modes, package density, and industrial temperature rating supports long-term deployment and system scalability.
If you would like pricing, availability, or a formal quote for MT29F32G08AFABAWP-IT:B, request a quote or submit an inquiry and include your required quantities and lead-time expectations.
