MT29F32G08AECCBH1-10ITZ:C TR

The MT29F32G08AECCBH1-10ITZ:C TR is a 32 Gbit non-volatile NAND flash memory device in a 100-ball VBGA (12×18) package. It implements NAND flash architecture with parallel I/O and supports both asynchronous and synchronous operation modes for system and data storage applications.

Designed for embedded and industrial applications, this device offers SLC NAND technology, industry-standard command support and a wide supply and temperature range to meet reliability and integration requirements where persistent storage and frequent program/erase cycles are needed.

Key Features

• Memory Type & Capacity  32 Gbit NAND flash organized as 4G × 8 (32Gbit total) for high-density non-volatile storage.
• Technology  Single-level cell (SLC) NAND technology as described in the device family datasheet.
• Interface & Timing  Parallel memory interface with support for asynchronous and synchronous I/O modes; clock frequency listed at 100 MHz and synchronous operation supports DQS data strobe signals for data synchronization.
• Performance  Asynchronous and synchronous operation modes with read/write throughput options described in the device family documentation (synchronous and asynchronous timing modes supported).
• Voltage Range  Wide operating supply: VCC 2.7 V to 3.6 V (VCCQ options described in datasheet).
• Package  100-ball VBGA package, 12 × 18 mm footprint, compact BGA for board-level integration.
• Operating Temperature  Industrial temperature grade: –40 °C to +85 °C (TA).
• Reliability & Endurance  Endurance and data-retention characteristics are provided in the device family datasheet (endurance example: 80,000 program/erase cycles and JESD47G-compliant data retention information as documented).

Typical Applications

• Embedded Storage  Local program and data storage for embedded systems that require non-volatile memory in a compact BGA package.
• Industrial Equipment  Firmware, system code, and data logging in industrial designs requiring operation across –40 °C to +85 °C.
• Consumer & Mobile Devices  High-density non-volatile memory for product designs needing parallel NAND flash in constrained PCB area.

Unique Advantages

• High-density SLC NAND  Delivers 32 Gbit of non-volatile storage using single-level cell technology for predictable program/erase behavior as documented in the datasheet.
• Flexible I/O modes  Supports both asynchronous and synchronous operation with DQS strobe support for synchronized data transfers, enabling integration with a range of memory controllers.
• Industrial temperature support  Specified operation from –40 °C to +85 °C (TA) for deployment in temperature-challenging environments.
• Wide supply range  Operates from 2.7 V to 3.6 V, simplifying power-domain design for systems using standard 3.3 V rails.
• Compact BGA package  100-ball VBGA (12×18) provides a small PCB footprint for space-constrained applications.
• Documented endurance and retention  Device family datasheet includes endurance (program/erase cycle) and data retention qualification details to aid system reliability planning.

Why Choose MT29F32G08AECCBH1-10ITZ:C TR?

The MT29F32G08AECCBH1-10ITZ:C TR combines 32 Gbit SLC NAND capacity with parallel I/O flexibility and documented endurance characteristics, making it suitable for embedded and industrial applications that require reliable non-volatile storage in a compact BGA package. Its support for both asynchronous and synchronous modes and DQS signaling allows designers to match device operation to system timing and throughput needs.

This device suits designs that demand a wide operating voltage range and industrial temperature support, along with the endurance and retention data provided in the device family documentation to support system-level reliability planning and lifecycle considerations.

Request a quote or submit an inquiry to obtain pricing, lead-time, and available packaging options for MT29F32G08AECCBH1-10ITZ:C TR.