MT29F32G08AECBBH1-12IT:B

The MT29F32G08AECBBH1-12IT:B is a 32 Gbit parallel NAND flash memory device implemented in Flash NAND technology and organized as 4G × 8. It provides high-density, non-volatile storage in a 100-ball VBGA (12×18) package and operates from a 2.7 V to 3.6 V supply.

Designed for applications that require robust storage across a wide temperature range, the device supports industrial operating temperatures (−40°C to +85°C) and implements industry-standard NAND features documented in the product family datasheet.

Key Features

• Memory Type and Organization Non-volatile NAND flash memory organized as 4G × 8 for a total capacity of 32 Gbit.
• Technology Flash NAND technology with single-level cell (SLC) architecture as documented in the product family datasheet.
• Interface and Timing Parallel memory interface; product specification lists a clock frequency of 83 MHz. The product family supports asynchronous and synchronous NAND operation and is ONFI 2.2-compliant as described in the datasheet.
• Performance (datasheet family details) Datasheet references synchronous I/O timing modes and asynchronous timing modes; family-level data shows per-pin throughput up to 200 MT/s (synchronous) and up to 50 MT/s (asynchronous).
• Memory Architecture Family-level organization includes large page and block structures (example: page size and block size defined in the datasheet) and multi-plane device architecture for parallel operations.
• Endurance and Data Retention Family-level reliability metrics include endurance up to 80,000 program/erase cycles and data retention compliant with JESD47G as stated in the datasheet.
• Voltage Supply VCC operating range 2.7 V to 3.6 V with VCCQ options documented in the datasheet.
• Package and Mounting 100-ball VBGA (12×18) BGA package for compact board-level mounting.
• Operating Temperature Industrial operating range −40°C to +85°C (TA) as specified for the IT-grade device.

Typical Applications

• Embedded Storage High-density non-volatile memory for embedded systems requiring 32 Gbit of parallel NAND storage in a compact BGA footprint.
• Industrial Control Storage for industrial controllers and instrumentation where the −40°C to +85°C operating range is required.
• Consumer and Computing Devices Onboard NAND storage for consumer electronics and computing modules that use parallel NAND interfaces and need large non-volatile capacity.

Unique Advantages

• High-density parallel NAND: 32 Gbit capacity (4G × 8) provides substantial on-board non-volatile storage in a single device.
• Flexible interface support: Parallel interface with family-level support for asynchronous and synchronous modes and ONFI 2.2 compliance for interoperability.
• Industrial temperature capability: Specified operation down to −40°C and up to +85°C for IT-grade deployments.
• Robust endurance and retention (family-level): Endurance and data retention metrics in the datasheet (80,000 P/E cycles and JESD47G-compliant retention) support long-term data storage needs.
• Compact BGA packaging: 100-ball VBGA (12×18) package enables space-efficient board integration.
• Wide supply voltage range: 2.7 V to 3.6 V VCC support accommodates common system power rails.

Why Choose IC FLASH 32GBIT PARALLEL 100VBGA?

The MT29F32G08AECBBH1-12IT:B positions itself as a high-density parallel NAND flash option that combines 32 Gbit capacity, industry-standard interface support, and industrial temperature operation. It is suited for designs that require compact, board-mounted non-volatile memory with family-documented endurance and retention characteristics.

This device is appropriate for engineers and procurement teams specifying parallel NAND storage for embedded, industrial, or consumer systems that need verified device-level and family-level technical details for integration and long-term reliability planning.

Request a quote or submit a parts inquiry to obtain pricing, availability, and ordering information for this MT29F32G08AECBBH1-12IT:B NAND flash device.