MT29F32G08ABEDBJ4-12:D TR

The MT29F32G08ABEDBJ4-12:D TR is a 32 Gbit non-volatile NAND Flash memory device in a 132-ball VBGA (12×18) package. It is organized as 4G × 8 with a parallel memory interface and supports asynchronous and synchronous NAND operation.

Designed for systems that require high-density parallel NAND storage, the device provides on-chip organization and performance features that support cache programming, multi-plane operations and hardware data strobe synchronization.

Key Features

• Memory Core 32 Gbit NAND Flash organized as 4G × 8 with 4096 blocks for the 32Gb device.
• ONFI 2.2 Compliance Open NAND Flash Interface (ONFI) 2.2-compliant device family support as documented in the datasheet.
• Synchronous and Asynchronous I/O Synchronous I/O supports DDR timing modes (clock rate example: 10 ns DDR) with per-pin throughput up to 200 MT/s; asynchronous I/O supports up to timing mode 5 with per-pin throughput up to 50 MT/s.
• Data Organization and Caching Page size (x8): 8,640 bytes (8,192 + 448); block size: 128 pages; supports program cache, read cache (sequential and random) and multi-plane commands.
• Performance Metrics Typical array performance examples include read page: 35 μs (max), program page: 350 μs (typ), and erase block: 1.5 ms (typ).
• Endurance and Data Retention Endurance specified at 80,000 program/erase cycles and data retention per JESD47G qualification statements in the datasheet.
• Voltage and Clock VCC operating range: 2.7–3.6 V. VCCQ supported at 1.7–1.95 V or 2.7–3.6 V. Product listing specifies a clock frequency of 83 MHz.
• Interface and Commands Parallel memory interface with support for ONFI command set features such as copyback, read unique ID, multi-LUN operations and one-time programmable (OTP) mode.
• Package and Temperature Supplied in a 132-ball VBGA (12×18) package; commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Embedded storage systems Parallel NAND storage for systems that require 32 Gbit non-volatile memory with page/block organization and cache features.
• Legacy parallel-interface designs Direct replacement or integration into designs that use a parallel NAND interface with a 132-ball VBGA footprint.
• Data buffering and multi-plane operations Applications that require multi-plane commands, copyback and read/write cache capabilities to optimize block-level throughput.

Unique Advantages

• High-density storage: 32 Gbit capacity in a single 132-ball VBGA package reduces PCB area for high-capacity memory requirements.
• Flexible I/O modes: Support for both asynchronous and synchronous (DDR) operation provides design flexibility for varying performance targets.
• ONFI interoperability: ONFI 2.2 compliance enables standardized command and timing support where ONFI compatibility is required.
• Robust program/erase endurance: Specified endurance of 80,000 program/erase cycles supports long-term write/erase usage patterns.
• Power and signaling options: Wide VCC range (2.7–3.6 V) and selectable VCCQ signaling options (1.7–1.95 V or 2.7–3.6 V) accommodate different system power domains.
• Package density: 132-ball VBGA (12×18) offers a compact form factor for board-level integration.

Why Choose MT29F32G08ABEDBJ4-12:D TR?

The MT29F32G08ABEDBJ4-12:D TR combines 32 Gbit NAND density, parallel interface flexibility and ONFI 2.2 family features in a compact 132-ball VBGA package. Its documented synchronous/asynchronous operating modes, cache features and multi-plane command support make it suitable for designs that need predictable block/page organization and supported NAND command sequences.

This device is well-suited for engineering teams and procurement seeking a verified NAND Flash option with clear electrical ranges (VCC 2.7–3.6 V), defined operating temperature (0°C to +70°C) and published endurance and timing characteristics as detailed in the manufacturer's datasheet.

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