MT29F32G08ABEABM73A3WC1L

IC FLASH 32GBIT DIE
Part Description

IC FLASH 32GBIT DIE

Quantity 82 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time13 Weeks
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatFLASHTechnologyFLASH - NAND (SLC)
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltageN/AMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°CWrite Cycle Time Word PageN/APackagingDie
Mounting MethodNon-VolatileMemory InterfaceN/AMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNN/AHTS CodeN/A

Overview of MT29F32G08ABEABM73A3WC1L – IC FLASH 32GBIT DIE

The MT29F32G08ABEABM73A3WC1L is a 32 Gbit non-volatile NAND flash memory delivered as a die and implemented using single-level cell (SLC) NAND technology. The device is organized as 4G × 8 and supports both asynchronous and synchronous I/O modes with ONFI 2.2 compliance.

This die-form NAND flash targets designs requiring SLC reliability and performance in a raw die format. Key value propositions include SLC endurance, multi-mode I/O performance, and an advanced command set for flexible block and plane management.

Key Features

  • Memory Type & Capacity  32 Gbit SLC NAND flash organized as 4G × 8 (device size 32Gb: 4096 blocks as specified in the product family).
  • Page, Block and Plane Organization  Page size (x8): 8,640 bytes (8,192 + 448). Block size: 128 pages (1,024K + 56K bytes). Two planes with 2,048 blocks per plane.
  • Synchronous and Asynchronous I/O  Supports synchronous I/O up to timing mode 5 with DDR clocking and asynchronous I/O up to timing mode 5; synchronous read/write throughput per pin up to 200 MT/s, asynchronous up to 50 MT/s.
  • Performance Timings  Array performance examples: read page up to 35 µs (max), program page ~350 µs (typ), erase block ~1.5 ms (typ); RC/ WC minimum 20 ns (as specified for ONFI modes).
  • Operating Voltage  VCC: 2.7–3.6 V. VCCQ: 1.7–1.95 V or 2.7–3.6 V (supported voltage ranges provided in device documentation).
  • Advanced Command Set  ONFI NAND Flash Protocol with advanced commands including program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane commands, multi-LUN operations, read unique ID, copyback, and more.
  • Reliability  Endurance rated at 80,000 program/erase cycles and JEDEC JESD47G-compliant data retention; operation status byte reports completion and pass/fail conditions.
  • Package & Temperature  Supplied as a die. Commercial operating temperature: 0°C to +70°C.

Typical Applications

  • Embedded system storage  Die-level SLC NAND for designs that integrate non-volatile code and data storage directly into custom packages or multi-die modules.
  • Module and subsystem integration  For module manufacturers and system integrators requiring raw die NAND to incorporate into controllers, custom packages or proprietary storage assemblies.
  • High-reliability data storage  Use where SLC endurance and advanced command features (multi-plane, copyback, OTP) are required for extended program/erase lifetimes and data management.

Unique Advantages

  • SLC endurance (80,000 P/E cycles)  Supports extended program/erase cycling for applications that require long-term write durability compared to multi-level cell options.
  • Dual I/O modes with high throughput  Synchronous DDR operation up to 200 MT/s per pin plus asynchronous modes provides design flexibility for performance-tuned interfaces.
  • ONFI 2.2 compliance  Standardized command set and timing modes simplify integration with ONFI-compatible controllers and firmware.
  • Advanced command and management features  Built-in program/read caches, multi-plane and multi-LUN operations, OTP and copyback enable efficient data handling and reduced host overhead.
  • Die-level supply for custom integration  Die format allows direct incorporation into custom packages, stacked assemblies, or bespoke module designs where board-level footprint or form factor constraints apply.
  • Documented operating voltages and timings  Clear VCC/VCCQ ranges and timing mode support enable predictable power design and timing closure during system integration.

Why Choose MT29F32G08ABEABM73A3WC1L?

The MT29F32G08ABEABM73A3WC1L combines SLC NAND endurance with flexible I/O modes and an extensive command set, making it suitable for designers who need die-level non-volatile storage with predictable endurance and performance characteristics. Its ONFI 2.2 compliance and documented timing/voltage ranges simplify controller integration and system validation.

This die is a practical choice for module manufacturers, system integrators, and OEMs that require raw NAND for custom packaging or specialized storage subsystems, offering long-term program/erase durability and on-die features that reduce host-side management complexity.

Request a quote or submit a product inquiry to receive pricing, availability, and integration support for this die-level NAND flash.

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