MT29F32G08ABCDBJ4-6ITR:D

The MT29F32G08ABCDBJ4-6ITR:D is a 32 Gbit non-volatile NAND flash memory device in a 132-ball VBGA (12×18) package. It implements parallel NAND architecture with a 4G × 8 memory organization and is designed for board-level integration where high-density, non-volatile storage is required.

Featuring asynchronous and synchronous operation modes, ONFI 2.2 compliance and an industrial operating temperature range, this device targets embedded and industrial memory applications that require robust endurance, defined program/erase performance and flexible interface timing.

Key Features

• Memory Core  32 Gbit NAND flash organized as 4G × 8 with device-level block and plane organization documented in the datasheet (device size 32Gb: 4096 blocks).
• Performance  Synchronous and asynchronous I/O modes with specified read page (35 µs max), program page (350 µs typical) and erase block (1.5 ms typical). Product-level clock frequency entry provided as 166 MHz.
• Interface  Parallel memory interface with ONFI 2.2-compliant command set and support for data strobe (DQS) in synchronous mode for DQ synchronization.
• Advanced Command Set  Supports program cache, read cache sequential/random, OTP mode, multi-plane commands, multi-LUN operations, read unique ID and copyback operations within a plane.
• Power  Operating voltage VCC: 2.7–3.6 V. VCCQ supported at 1.7–1.95 V or 2.7–3.6 V as specified in the datasheet.
• Reliability & Endurance  Endurance specified at 80,000 program/erase cycles with data retention and qualification statements referenced to JESD47G in the datasheet.
• Package & Temperature  132-ball VBGA (12×18) package. Industrial operating temperature range: –40 °C to +85 °C (TA).

Typical Applications

• Embedded Storage  Board-level non-volatile storage for embedded systems requiring high-density NAND in a compact BGA footprint.
• Industrial Memory Solutions  Industrial devices and systems operating across –40 °C to +85 °C that need defined P/E endurance and retention characteristics.
• System-Level Flash  Applications that leverage parallel NAND and ONFI 2.2 command support for synchronous/asynchronous data transfer modes and cache operations.

Unique Advantages

• High-density, board-friendly package  32 Gbit capacity in a 132-ball VBGA (12×18) package enables compact integration on system PCBs.
• Flexible I/O modes  Asynchronous and synchronous interfaces with DQS support allow designers to select timing and throughput modes suitable for system requirements.
• Advanced NAND commands  Program/read caches, multi-plane operations and OTP mode provide functional flexibility for system firmware and data management.
• Industrial temperature rating  Specified operation from –40 °C to +85 °C supports deployment in industrial environments where wider thermal range is required.
• Defined endurance and retention  Endurance (80,000 P/E cycles) and JESD47G-referenced data retention statements aid reliability planning and lifecycle estimates.

Why Choose IC FLASH 32GBIT PAR 132VBGA?

The MT29F32G08ABCDBJ4-6ITR:D offers a combination of 32 Gbit density, parallel interface flexibility and an industrial temperature rating for designs that require reliable on-board non-volatile storage. Its support for ONFI 2.2 features, synchronous DQS signaling and advanced command set options make it suitable where controlled performance and NAND feature set are important.

This device is appropriate for engineering teams building embedded systems and industrial equipment that need compact, high-density flash with documented endurance and timing characteristics. The package, voltage options and command support provide integration choices for a range of board-level storage implementations.

If you need pricing, availability or a formal quote for MT29F32G08ABCDBJ4-6ITR:D, please submit a request for a quote or inquiry and include quantity, lead-time requirements and any relevant technical questions.