MT29F32G08ABEABM73A3WC1

IC FLASH 32GBIT PARALLEL DIE
Part Description

IC FLASH 32GBIT PARALLEL DIE

Quantity 1,233 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackagingDie
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08ABEABM73A3WC1 – IC FLASH 32GBIT PARALLEL DIE

The MT29F32G08ABEABM73A3WC1 is a 32 Gbit non-volatile NAND flash die offered by Micron Technology. It is organized as 4G × 8 and implements asynchronous and synchronous NAND architectures with a parallel memory interface.

Designed for die-level integration, the device provides a high-density NAND option with standard commercial operating conditions and support for advanced NAND command and cache features for embedded storage implementations.

Key Features

  • Memory Type & Organization  Non-volatile NAND flash organized as 4G × 8 delivering 32 Gbit capacity (32Gb).
  • Flash Architecture  Single-level cell (SLC) technology with ONFI 2.2-compliant interface and support for both asynchronous and synchronous I/O modes.
  • Page / Block / Plane Geometry  Page size (x8): 8,640 bytes (8,192 + 448 bytes); block size: 128 pages (1,024K + 56K bytes); device (32Gb) contains 4,096 blocks and 2 planes × 2,048 blocks per plane.
  • Synchronous Performance  Synchronous timing up to mode 5 with DDR clock rate of 10 ns and read/write throughput per pin up to 200 MT/s; data strobe (DQS) signals support hardware synchronization.
  • Asynchronous Performance  Asynchronous timing up to mode 5 with read/write throughput per pin up to 50 MT/s and RC/WC minimum of 20 ns.
  • Array Performance  Read page: up to 35 μs (MAX); program page: ~350 μs (TYP); erase block: ~1.5 ms (TYP).
  • Advanced Command Set  Program cache, read cache (sequential and random), OTP mode, multi-plane commands, multi-LUN operations, read unique ID, and copyback operations within a plane.
  • Reliability & Endurance  Endurance rated at 80,000 program/erase cycles and data retention compliant with JESD47G (see qualification report).
  • Voltage & Power  Operating VCC range: 2.7–3.6 V; VCCQ options include 1.7–1.95 V or 2.7–3.6 V as defined in the device family documentation.
  • Operating Temperature  Commercial operating temperature range: 0°C to +70°C (TA).
  • Package  Supplied as a die for direct integration into customer packages and modules.
  • Startup & Status  RESET (FFh) required as first command after power-on; an operation status byte provides software-based completion, pass/fail, and write-protect status indicators.

Typical Applications

  • Embedded Storage  High-density non-volatile storage where die-level NAND integration is required for custom module or board-level designs.
  • Commercial Electronics  Commercial-temperature systems needing parallel NAND flash with synchronous and asynchronous I/O options.
  • High-Reliability Embedded Systems  Designs that benefit from documented endurance (80,000 P/E cycles) and JESD47G-compliant data retention.

Unique Advantages

  • High Density in Die Form  32 Gbit capacity in a die package enables compact, high-density storage integration for custom assemblies.
  • Flexible I/O Modes  Support for both synchronous (DDR) and asynchronous interfaces lets designers choose between higher throughput or legacy timing compatibility.
  • Advanced Data Management  On-die features such as program/read cache, OTP, multi-plane and multi-LUN commands simplify data flow and block management.
  • Deterministic Array Timing  Published read, program, and erase timing (typical and maximum) support predictable performance planning and system-level timing budgets.
  • Robust Endurance and Retention  Documented 80,000 program/erase cycles and JESD47G data retention compliance support long-term data integrity requirements.
  • Standard Voltage Range  2.7–3.6 V supply compatibility aligns with common system power rails for straightforward integration.

Why Choose MT29F32G08ABEABM73A3WC1?

The MT29F32G08ABEABM73A3WC1 provides a compact, die-level 32 Gbit NAND flash solution suited to designs requiring parallel interface NAND with both synchronous and asynchronous operation modes. Its documented endurance, data retention compliance, and detailed timing figures make it appropriate for commercial embedded storage designs where predictability and integration flexibility matter.

This part is aimed at engineers integrating high-density NAND at the die level who need clear electrical, timing, and command-set information to support module or custom package designs within the commercial temperature range.

Request a quote or submit a product inquiry to receive pricing and availability details for MT29F32G08ABEABM73A3WC1.

Request a Quote

















    No file selected



    Our team will respond within 24 hours.


    I agree to receive newsletters and promotional emails. I can unsubscribe at any time.

    Certifications and Membership
    NQA AS9100 CMYK ANAB
    NQA AS9100 ANAB Badge
    ESD2020 Badge
    ESD2020 Association Badge
    GIDEP Badge
    GIDEP Badge
    Suntsu ERAI MemberVerification
    Suntsu ERAI Member Verification
    Available Shipping Methods
    FedEx
    UPS
    DHL
    Accepted Payment Methods
    American Express
    American Express
    Discover
    Discover
    MasterCard
    MasterCard
    Visa
    Visa
    UnionPay
    UnionPay
    Featured Products
    Latest News
    keyboard_arrow_up