MT29F32G08ABEDBM83C3WC1

IC FLASH 32GBIT PAR 83MHZ DIE
Part Description

IC FLASH 32GBIT PAR 83MHZ DIE

Quantity 882 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackagingDie
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity LevelN/ARoHS ComplianceN/AREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08ABEDBM83C3WC1 – IC FLASH 32GBIT PAR 83MHZ DIE

The MT29F32G08ABEDBM83C3WC1 is a 32 Gbit non-volatile NAND flash memory die implemented in a 4G × 8 organization with a parallel interface and an 83 MHz clock. It is provided as a bare die for integration into custom packages or multi-die modules and targets applications that require high-density NAND storage in a die form factor.

Built on NAND flash technology and listed with features from the associated Micron NAND family, the device supports synchronous and asynchronous operation modes, a broad operating voltage range, and commercial operating temperature ratings suitable for standard embedded systems.

Key Features

  • Memory Type and Density  32 Gbit NAND flash organized as 4G × 8, providing high-density non-volatile storage in a single die.
  • Interface and Clock  Parallel memory interface with a specified clock frequency of 83 MHz for parallel operation.
  • Synchronous and Asynchronous I/O  Device family supports synchronous I/O (up to synchronous timing mode 5) and asynchronous I/O (up to asynchronous timing mode 5); synchronous operation supports DDR timing and data strobe (DQS) for data synchronization.
  • Performance Metrics  Asynchronous read/write throughput up to 50 MT/s per pin; synchronous read/write throughput up to 200 MT/s per pin (DDR). Typical array timings include read page ~35 μs, program page ~350 μs, and erase block ~1.5 ms.
  • Advanced Command Set  Supports ONFI-compliant command set features including program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback, and one-time programmable (OTP) mode.
  • Endurance and Data Retention  Family-level quality and reliability details include endurance up to 80,000 program/erase cycles and data retention compliant with JESD47G qualification reporting.
  • Power  Operating supply voltage range VCC: 2.7–3.6 V; VCCQ options include 1.7–1.95 V or 2.7–3.6 V as defined by the family documentation.
  • Package/Form Factor  Supplied as a die (bare die) for integration; package options for the family also include LGA, TSOP, and BGA in other member parts.
  • Operating Temperature  Commercial operating temperature range specified as 0 °C to +70 °C (TA).
  • Standards Compliance  Device family is ONFI 2.2-compliant (per the datasheet family notes).

Typical Applications

  • Embedded Non-Volatile Storage  Use as high-density NAND storage for embedded systems that require die-level integration and firmware or data storage.
  • Custom Module Integration  Suitable for designers building custom multi-die modules or proprietary packages where a bare die form factor is required.
  • Code and Data Storage  Applicable where large-capacity, non-volatile memory is needed for code shadowing, file systems, or large-data buffering in commercial-temperature systems.

Unique Advantages

  • High Density in Die Form  32 Gbit capacity in a 4G × 8 organization enables compact, high-capacity designs when a die is required for custom integration.
  • Flexible I/O Modes  Support for both asynchronous and synchronous I/O modes, including DDR synchronous operation and DQS, provides flexibility to match system timing and throughput needs.
  • Robust Endurance and Retention  Family-level endurance of up to 80,000 program/erase cycles and JESD47G data retention compliance support reliable life-cycle planning.
  • Broad Voltage Support  2.7–3.6 V VCC range (with VCCQ options) simplifies integration into a variety of commercial-voltage designs.
  • Advanced NAND Command Support  ONFI 2.2-compliant command set and advanced operations (multi-plane, multi-LUN, program/read caches, OTP) enable efficient data management and parallel operations at the controller level.

Why Choose MT29F32G08ABEDBM83C3WC1?

The MT29F32G08ABEDBM83C3WC1 delivers high-density, parallel NAND flash in a die form factor with flexible I/O options and family-proven NAND features. Its combination of 32 Gbit capacity, support for synchronous/asynchronous interfaces, and advanced command set make it appropriate for designers requiring die-level NAND integration and scalable storage performance within commercial temperature ranges.

For engineering teams designing custom packages or multi-die modules, this die offers clear electrical and timing specifications (including supply voltage range and clocking) and documented endurance and retention characteristics to support long-term system planning and integration.

If you need pricing, availability, or a formal quote for MT29F32G08ABEDBM83C3WC1, request a quote or contact our sales team to discuss lead times and procurement options.

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