MT29F32G08ABEDBM83C3WC1
| Part Description |
IC FLASH 32GBIT PAR 83MHZ DIE |
|---|---|
| Quantity | 882 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABEDBM83C3WC1 – IC FLASH 32GBIT PAR 83MHZ DIE
The MT29F32G08ABEDBM83C3WC1 is a 32 Gbit non-volatile NAND flash memory die implemented in a 4G × 8 organization with a parallel interface and an 83 MHz clock. It is provided as a bare die for integration into custom packages or multi-die modules and targets applications that require high-density NAND storage in a die form factor.
Built on NAND flash technology and listed with features from the associated Micron NAND family, the device supports synchronous and asynchronous operation modes, a broad operating voltage range, and commercial operating temperature ratings suitable for standard embedded systems.
Key Features
- Memory Type and Density 32 Gbit NAND flash organized as 4G × 8, providing high-density non-volatile storage in a single die.
- Interface and Clock Parallel memory interface with a specified clock frequency of 83 MHz for parallel operation.
- Synchronous and Asynchronous I/O Device family supports synchronous I/O (up to synchronous timing mode 5) and asynchronous I/O (up to asynchronous timing mode 5); synchronous operation supports DDR timing and data strobe (DQS) for data synchronization.
- Performance Metrics Asynchronous read/write throughput up to 50 MT/s per pin; synchronous read/write throughput up to 200 MT/s per pin (DDR). Typical array timings include read page ~35 μs, program page ~350 μs, and erase block ~1.5 ms.
- Advanced Command Set Supports ONFI-compliant command set features including program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback, and one-time programmable (OTP) mode.
- Endurance and Data Retention Family-level quality and reliability details include endurance up to 80,000 program/erase cycles and data retention compliant with JESD47G qualification reporting.
- Power Operating supply voltage range VCC: 2.7–3.6 V; VCCQ options include 1.7–1.95 V or 2.7–3.6 V as defined by the family documentation.
- Package/Form Factor Supplied as a die (bare die) for integration; package options for the family also include LGA, TSOP, and BGA in other member parts.
- Operating Temperature Commercial operating temperature range specified as 0 °C to +70 °C (TA).
- Standards Compliance Device family is ONFI 2.2-compliant (per the datasheet family notes).
Typical Applications
- Embedded Non-Volatile Storage Use as high-density NAND storage for embedded systems that require die-level integration and firmware or data storage.
- Custom Module Integration Suitable for designers building custom multi-die modules or proprietary packages where a bare die form factor is required.
- Code and Data Storage Applicable where large-capacity, non-volatile memory is needed for code shadowing, file systems, or large-data buffering in commercial-temperature systems.
Unique Advantages
- High Density in Die Form 32 Gbit capacity in a 4G × 8 organization enables compact, high-capacity designs when a die is required for custom integration.
- Flexible I/O Modes Support for both asynchronous and synchronous I/O modes, including DDR synchronous operation and DQS, provides flexibility to match system timing and throughput needs.
- Robust Endurance and Retention Family-level endurance of up to 80,000 program/erase cycles and JESD47G data retention compliance support reliable life-cycle planning.
- Broad Voltage Support 2.7–3.6 V VCC range (with VCCQ options) simplifies integration into a variety of commercial-voltage designs.
- Advanced NAND Command Support ONFI 2.2-compliant command set and advanced operations (multi-plane, multi-LUN, program/read caches, OTP) enable efficient data management and parallel operations at the controller level.
Why Choose MT29F32G08ABEDBM83C3WC1?
The MT29F32G08ABEDBM83C3WC1 delivers high-density, parallel NAND flash in a die form factor with flexible I/O options and family-proven NAND features. Its combination of 32 Gbit capacity, support for synchronous/asynchronous interfaces, and advanced command set make it appropriate for designers requiring die-level NAND integration and scalable storage performance within commercial temperature ranges.
For engineering teams designing custom packages or multi-die modules, this die offers clear electrical and timing specifications (including supply voltage range and clocking) and documented endurance and retention characteristics to support long-term system planning and integration.
If you need pricing, availability, or a formal quote for MT29F32G08ABEDBM83C3WC1, request a quote or contact our sales team to discuss lead times and procurement options.