MT29F32G08AECBBH1-12IT:B TR

The MT29F32G08AECBBH1-12IT:B TR is a 32 Gbit non-volatile NAND flash memory device implemented in SLC architecture with a parallel memory interface. It provides block- and page-oriented storage with industry-level performance options for synchronous and asynchronous I/O.

Designed for embedded and industrial storage use, the device offers a compact 100-ball VBGA (12×18) package, wide operating voltage range, and industrial temperature support to meet robust design and integration requirements.

Key Features

• Memory Core 32 Gbit NAND flash, organized as 4G × 8 with SLC technology for single-level cell operation.
• Organization & Capacity Page size (×8): 8,192 + 448 bytes (8,640 bytes total); block size: 128 pages; device size (32Gb): 4,096 blocks.
• Interface & Protocol Parallel NAND interface with ONFI 2.2-compliant command set; supports both asynchronous and synchronous operation modes.
• Synchronous Performance Synchronous I/O up to timing mode 5 with DDR 10 ns clock rate and read/write throughput per pin up to 200 MT/s; data strobe (DQS) support for hardware data synchronization.
• Asynchronous Performance Asynchronous operation up to timing mode 5 with read/write throughput per pin up to 50 MT/s and a listed clock frequency of 83 MHz.
• Flash Operations & Latency Typical array performance: read page 35 μs (max), program page ~350 μs (typ), erase block ~1.5 ms (typ).
• Advanced Command Set Program cache, read cache sequential/random, multi-plane and multi-LUN commands, copyback, OTP mode, and read unique ID.
• Power Operating VCC range: 2.7–3.6 V; VCCQ options include 1.7–1.95 V or 2.7–3.6 V as defined in the device specification.
• Package & Temperature 100-ball BGA package (100-VBGA, 12×18); industrial operating temperature range −40 °C to +85 °C.
• Reliability Endurance rated at 80,000 program/erase cycles and data-retention provisions in accordance with the device qualification guidance.

Typical Applications

• Embedded Storage — Local non-volatile storage for embedded systems that require parallel NAND flash in a compact BGA package.
• Industrial Controllers — Firmware and data storage in instrumentation and control systems benefiting from the −40 °C to +85 °C operating range.
• Solid-State Storage Subsystems — Use as a block-oriented NAND device where SLC endurance and advanced command support (multi-plane, copyback, OTP) are required.
• Legacy Parallel NAND Designs — Replacement or design-in for systems using parallel NAND interfaces and 4G × 8 organization.

Unique Advantages

• Industrial Temperature Support: Rated for −40 °C to +85 °C, enabling deployment in harsh-temperature environments.
• SLC Endurance: 80,000 program/erase cycles provide a durable storage medium for frequent-write applications.
• Flexible I/O Modes: Supports both asynchronous and high-speed synchronous modes (ONFI 2.2), allowing designers to balance legacy compatibility and higher throughput.
• Advanced NAND Commands: Program/read caches, multi-plane and multi-LUN commands, and copyback operations simplify data management and can improve effective throughput.
• Compact BGA Packaging: 100-ball VBGA (12×18) minimizes board area while delivering full parallel NAND functionality.

Why Choose IC FLASH 32GBIT PARALLEL 100VBGA?

The MT29F32G08AECBBH1-12IT:B TR delivers a combination of SLC NAND endurance, flexible synchronous/asynchronous interfaces, and industrial temperature capability suited to embedded and industrial storage designs. Its ONFI 2.2 compliance and advanced command set support modern NAND features such as multi-plane operations, program/read caching, and hardware data synchronization via DQS.

This device is appropriate for designers seeking a proven parallel NAND solution in a compact 100-ball VBGA package with a 2.7–3.6 V supply range and a documented set of performance characteristics (page/program/erase timings and per-pin throughput). It offers long-term design suitability where endurance, temperature range, and interface flexibility are key selection criteria.

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