MT29F32G08AECCBH1-10:C TR

The MT29F32G08AECCBH1-10:C TR is a 32 Gbit non-volatile NAND flash memory device from Micron Technology Inc., provided in a 100-ball VBGA (12×18) package. The device uses NAND flash architecture with a 4G × 8 memory organization and a parallel memory interface.

Designed for systems requiring parallel non-volatile storage, the device supports both asynchronous and synchronous I/O modes (ONFI 2.2-compliant) with synchronous timing up to mode 5. Key electrical and environmental parameters include a VCC supply range of 2.7–3.6 V and a commercial operating temperature range of 0 °C to +70 °C.

Key Features

• Memory Capacity & Organization 32 Gbit density organized as 4G × 8; device-level block count for 32 Gb is 4,096 blocks (per datasheet).
• NAND Technology & Command Support FLASH - NAND device that uses single-level cell (SLC) technology and implements the ONFI 2.2-compliant command set. Advanced command features include program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane and multi-LUN operations, copyback, and read unique ID.
• Performance Modes Supports both asynchronous and synchronous I/O. ClockFrequency is specified at 100 MHz; datasheet indicates synchronous timing up to mode 5 and asynchronous timing up to mode 5 with per-pin throughput figures described in the datasheet.
• Endurance & Data Integrity Endurance rating of 80,000 program/erase cycles and data retention compliant with JESD47G as stated in the datasheet.
• Power and I/O Voltage Operating VCC range of 2.7–3.6 V. VCCQ options include 1.7–1.95 V or 2.7–3.6 V (as specified in the datasheet).
• Package & Mechanical Supplied in a 100-ball VBGA package (12 × 18 ball array) for compact board-level integration and surface-mount assembly.
• Operating Conditions Commercial temperature grade with an ambient operating range of 0 °C to +70 °C (TA).

Typical Applications

• Embedded storage systems — Provides parallel, non-volatile NAND storage for embedded designs that require a 32 Gbit density in a compact BGA package.
• Firmware and code storage — SLC NAND architecture and high endurance support storage of firmware and critical code where repeated program/erase cycles are expected.
• Data logging and local buffers — Non-volatile storage suitable for local data buffering and logging in commercial-temperature equipment.

Unique Advantages

• High-density NAND in a compact form — 32 Gbit capacity in a 100-ball VBGA (12×18) reduces board area while delivering substantial non-volatile storage.
• Flexible interface modes — Support for both asynchronous and synchronous I/O (ONFI 2.2) and multiple timing modes simplifies integration with a range of parallel host controllers.
• Robust endurance — 80,000 program/erase cycles provides long usable life for write-intensive firmware and data-storage applications.
• Wide supply and I/O voltage support — VCC range of 2.7–3.6 V with VCCQ options enables compatibility with common system power rails.
• Advanced NAND feature set — Built-in features such as program/read caches, multi-plane operations, and OTP mode enable optimized performance and flexible memory management.

Why Choose MT29F32G08AECCBH1-10:C TR?

The MT29F32G08AECCBH1-10:C TR is positioned as a high-density, commercially rated parallel NAND flash memory solution for designs that require reliable non-volatile storage in a compact VBGA package. Its SLC NAND architecture, ONFI 2.2 compliance, and advanced command set provide a balance of endurance, performance flexibility, and integration options suited to embedded systems, firmware storage, and data-logging applications.

Manufactured by Micron Technology Inc., the device’s documented electrical, timing, and endurance characteristics enable engineers to evaluate suitability for commercial-temperature designs where a 32 Gbit parallel NAND component is required.

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