MT29F32G08ABEABM73A3WC1P

The MT29F32G08ABEABM73A3WC1P is a 32Gbit non-volatile NAND flash memory supplied as a die. It uses single-level cell (SLC) NAND architecture with a 4G × 8 organization and provides parallel interface options for embedded storage integration.

Designed for commercial-temperature applications, the device supports both asynchronous and synchronous I/O (ONFI 2.2-compliant) and delivers a balance of endurance and performance suited for firmware, boot storage, and general-purpose embedded data storage where a die-format NAND is required.

Key Features

• Memory Type & Organization 32 Gbit NAND flash organized as 4G × 8 with a page size (×8) of 8,640 bytes (8,192 + 448) and block size of 128 pages (1,024K + 56K bytes). Device size for 32Gb corresponds to 4,096 blocks.
• Technology Single-level cell (SLC) NAND for endurance and data integrity characteristics compared to multi-level alternatives.
• Interface & Protocol Parallel memory interface with ONFI 2.2 compliance. Supports both asynchronous and synchronous I/O modes with DQS data-strobe support for synchronous timing.
• Performance Synchronous operation up to timing mode 5 with a DDR clock rate of 10 ns and read/write throughput per pin up to 200 MT/s; asynchronous throughput up to 50 MT/s. Typical array timings include read page ~35 µs, program page ~350 µs, and erase block ~1.5 ms.
• Endurance & Reliability Rated for 80,000 program/erase cycles and data retention compliant with JESD47G; includes operation-status and write-protect reporting features.
• Power & Voltage VCC operating range 2.7–3.6 V. VCCQ supported at 1.7–1.95 V or 2.7–3.6 V depending on configuration.
• Package & Temperature Supplied as a die. Commercial operating temperature range 0 °C to +70 °C.
• Advanced Command Set Supports program cache, read-cache (sequential and random), multi-plane commands, multi-LUN operations, OTP mode, read unique ID and copyback within a plane.

Typical Applications

• Consumer and Embedded Devices Compact die-format NAND for integration into consumer electronics and embedded modules requiring local non-volatile storage.
• Firmware and Boot Storage Reliable SLC-based storage for boot code, firmware images, and system configuration storage in commercial equipment.
• Storage Controllers and Caching Use as raw NAND in storage controllers or caching applications where ONFI-compliant synchronous/asynchronous operation and per-pin throughput are required.
• Data Logging and Retention Use Cases Applications that require sustained program/erase endurance and JESD47G data-retention compliance within the commercial temperature range.

Unique Advantages

• SLC Endurance: Endurance rating of 80,000 program/erase cycles supports longer lifecycle for write-intensive embedded applications.
• Flexible I/O Modes: ONFI 2.2 compliance with both asynchronous and synchronous interfaces enables integration with diverse controller architectures.
• High Per-Pin Throughput: Synchronous throughput up to 200 MT/s per pin and DDR clocking enable improved transfer rates in supported system designs.
• Advanced Feature Set: Program/read caches, multi-plane and multi-LUN operations, OTP and copyback capabilities provide system-level flexibility for performance and data management.
• Die Format for Custom Integration: Supplied as a die to support custom packaging and high-density board-level integration where bare-die solutions are required.
• Commercial Temperature Rating: Specified operation from 0 °C to +70 °C to match a wide range of commercial-grade deployments.

Why Choose MT29F32G08ABEABM73A3WC1P?

The MT29F32G08ABEABM73A3WC1P positions itself as a durable, ONFI-compliant SLC NAND die that balances endurance, protocol flexibility, and per-pin performance for commercial embedded storage applications. Its advanced command set and synchronous/asynchronous capability make it suitable for designs requiring raw NAND integration with optimized read/write behaviors.

This device is a fit for engineering teams building custom-packaged modules or board-level solutions that need a die-format NAND with defined electrical ranges (VCC 2.7–3.6 V) and commercial operating temperature support. The combination of endurance, feature set, and protocol compatibility supports long-term robustness and integration into established NAND-based storage ecosystems.

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