MT29F32G08ABCDBJ4-6ITR:D TR
| Part Description |
IC FLASH 32GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,257 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABCDBJ4-6ITR:D TR – IC FLASH 32GBIT PAR 132VBGA
The MT29F32G08ABCDBJ4-6ITR:D TR is a 32 Gbit parallel NAND flash memory device based on NAND FLASH technology. It provides asynchronous and synchronous I/O options, SLC storage organization, and a parallel interface in a 132-ball VBGA (12×18) package for space-constrained board designs.
Designed for embedded and industrial applications, the device targets system-level non-volatile storage needs where high endurance, defined operating-temperature range, and flexible timing modes are required. Key value propositions include SLC reliability, support for synchronous DDR timing modes, and advanced command/features for efficient block and page operations.
Key Features
- Memory Architecture 32 Gbit NAND organized as 4G × 8 with SLC technology; device-level organization includes 4096 blocks for the 32Gb density.
- Advanced I/O Modes Supports asynchronous and synchronous I/O; synchronous operation includes DDR timing (clock rate 10 ns) and data-strobe (DQS) signals for data synchronization.
- Performance Synchronous read/write throughput up to 200 MT/s per pin and asynchronous throughput up to 50 MT/s per pin; read page, program page, and erase block times are specified in the datasheet.
- Command and Feature Set ONFI-compliant command set with program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane and multi-LUN operations, copyback, and Read Unique ID.
- Reliability and Endurance Endurance rated to 80,000 program/erase cycles and data retention compliant to JESD47G as documented in the qualification report.
- Power and Voltage Operating supply range VCC: 2.7–3.6 V (VCCQ options 1.7–1.95 V or 2.7–3.6 V supported as described in the device specification).
- Packaging and Temperature 132-ball VBGA (12×18) package; industrial operating temperature range –40 °C to +85 °C (commercial range also noted in the datasheet).
Typical Applications
- Industrial Embedded Storage Non-volatile data and firmware storage in industrial systems that require operation from –40 °C to +85 °C and high endurance.
- Embedded Systems Local program and data flash for embedded controllers and system modules that use parallel NAND interfaces and need SLC durability.
- Consumer and Commercial Devices Mass-storage and firmware retention in commercial-temperature designs where a parallel NAND interface and ONFI command compatibility are required.
Unique Advantages
- High-density SLC Storage: 32 Gbit capacity in SLC organization provides a balance of density and endurance for demanding write/erase workloads.
- Flexible Timing and Interface Modes: Support for both asynchronous and synchronous DDR timing (with DQS) enables designers to match interface performance to system requirements.
- Advanced Command Features: On-chip support for program/read cache, multi-plane and multi-LUN operations, and OTP mode simplifies system-level data management and performance optimization.
- Rated Endurance and Retention: Documented 80,000 program/erase cycles and JESD47G-compliant data retention provide measurable reliability metrics for lifecycle planning.
- Industrial Temperature Capability: Availability of an industrial temperature range (–40 °C to +85 °C) supports deployment in temperature-challenged environments.
- Compact VBGA Package: 132-ball VBGA (12×18) package offers a compact footprint for space-constrained board designs.
Why Choose MT29F32G08ABCDBJ4-6ITR:D TR?
This MT29F32G08ABCDBJ4-6ITR:D TR device positions itself as a robust parallel NAND flash option where SLC endurance, flexible synchronous/asynchronous interfaces, and industrial temperature capability are required. Its feature set—including ONFI-compliant command support, advanced caching and multi-plane operations, and well-documented timing/performance—makes it suitable for embedded and industrial storage applications that demand verifiable endurance and retention metrics.
The device is appropriate for designers seeking a compact VBGA package, defined voltage supply range (2.7–3.6 V), and documented performance characteristics to support system integration, qualification, and long-term reliability planning.
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