MT29F32G08ABCDBJ4-6IT:D TR
| Part Description |
IC FLASH 32GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,479 Available (as of May 4, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABCDBJ4-6IT:D TR – IC FLASH 32GBIT PAR 132VBGA
The MT29F32G08ABCDBJ4-6IT:D TR is a 32 Gbit parallel NAND flash memory device implemented in SLC NAND architecture. It provides non-volatile storage in a 132-ball VBGA (12×18) package and targets system-level designs that require parallel NAND storage with industrial temperature capability.
Key attributes include a 4G × 8 memory organization, a parallel memory interface, a 2.7–3.6 V supply range, and an operating temperature of −40°C to +85°C, making it suitable for designs that need robust, high-density non-volatile memory in a compact BGA package.
Key Features
- Memory Type and Organization Single-level cell (SLC) NAND flash, organized as 4G × 8 for a total device capacity of 32 Gbit.
- Interface Parallel memory interface supporting asynchronous and synchronous operation modes defined in the device datasheet.
- Performance Synchronous I/O supports up to high-speed timing modes with DDR clocking; asynchronous and synchronous timing modes are supported per datasheet specifications. Typical array operations include read page, program page and erase block timings provided in the device documentation.
- Supply Voltage VCC operating range of 2.7–3.6 V for main supply compatibility with common system rails.
- Temperature and Reliability Industrial operating temperature range of −40°C to +85°C and documented data-retention and endurance characteristics in the datasheet (including endurance specified in the device documentation).
- Package 132-ball VBGA (12×18) package for space-efficient board-level integration.
- Command and Feature Set Supports ONFI 2.2-compliant features and an advanced command set including program cache, read cache (sequential and random), OTP mode, multi-plane commands, multi-LUN operations, read unique ID, and copyback operations as described in the datasheet.
Typical Applications
- Embedded Storage System-level non-volatile storage for designs that require a parallel NAND interface and high-density capacity.
- Industrial Systems Storage in industrial equipment leveraging the −40°C to +85°C operating range for extended temperature applications.
- Firmware and Boot Storage Non-volatile storage for firmware, boot images, or application code where SLC NAND endurance and data retention characteristics are required.
- Data Logging and Local Archive Local data retention and block-level erase/program capabilities suitable for logging and non-volatile data storage within embedded systems.
Unique Advantages
- High-density SLC NAND: 32 Gbit capacity in a 4G × 8 organization provides substantial non-volatile storage without larger board-level footprints.
- Parallel interface for legacy and high-throughput designs: Parallel NAND interface enables integration into systems designed around parallel memory buses.
- Industrial temperature capability: Rated for −40°C to +85°C operation, supporting deployment in temperature-challenging environments.
- Flexible supply range: 2.7–3.6 V supply accommodates common system voltage rails for straightforward power integration.
- Compact VBGA package: 132-ball VBGA (12×18) offers a compact footprint for space-constrained board layouts.
- Advanced command set and ONFI compatibility: Feature set including program/read caches, multi-plane and multi-LUN operations, OTP mode, and ONFI 2.2 compliance support versatile flash management and performance options as documented in the datasheet.
Why Choose MT29F32G08ABCDBJ4-6IT:D TR?
This device positions itself as a durable, high-density parallel NAND flash option for engineers needing SLC NAND storage in a compact VBGA package with industrial temperature support. Its documented feature set and command capabilities enable flexible flash management, while the 2.7–3.6 V supply and parallel interface simplify integration into a range of embedded systems.
Choose the MT29F32G08ABCDBJ4-6IT:D TR for designs that require reliable non-volatile storage with explicit endurance and retention characteristics, support for advanced NAND operations, and a compact footprint for board-level integration.
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