MT29F32G08ABCABH1-10Z:A
| Part Description |
IC FLASH 32GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 1,130 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABCABH1-10Z:A – IC FLASH 32GBIT PARALLEL 100VBGA
The MT29F32G08ABCABH1-10Z:A is a 32 Gbit non-volatile NAND flash memory device in a 100-ball VBGA package. It implements parallel NAND architecture with SLC technology and is intended for systems that require high-density, parallel flash storage in a compact BGA footprint.
This device targets designs requiring large-capacity, page/block-organized NAND storage with support for both asynchronous and synchronous I/O modes. Key value comes from its high endurance, ONFI 2.2 protocol support, and a package optimized for space-constrained commercial applications.
Key Features
- Memory Type & Capacity – 32 Gbit NAND flash organized as 4G × 8, providing a high-density non-volatile storage element for embedded systems.
- Cell Technology – Single-level cell (SLC) technology as specified in the datasheet, offering device-level endurance characteristics.
- Organization & Geometry – Page size (x8): 8,640 bytes (8,192 + 448); block size: 128 pages (1,024K + 56K bytes); device includes 4,096 blocks for the 32Gb density.
- Interface & Protocol – Parallel memory interface with ONFI 2.2 compliance and support for asynchronous and synchronous command sets; data strobe (DQS) signals supported for synchronous operation.
- Performance – Supports synchronous I/O up to timing mode 5 with DDR timing (10 ns); synchronous read/write throughput per pin up to 200 MT/s and asynchronous throughput per pin up to 50 MT/s. Specified clock frequency: 100 MHz.
- Power & Voltage – VCC operating range: 2.7–3.6 V; VCCQ supported ranges include 1.7–1.95 V and 2.7–3.6 V.
- Package – 100-ball VBGA (12 × 18) package case, enabling compact board-level integration.
- Operating Temperature – Commercial temperature range: 0 °C to +70 °C (TA).
- Command & Advanced Features – ONFI NAND command set with program/read/erase operations, program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback, read unique ID, and an OTP mode. RESET (FFh) is required as the first command after power-on.
- Quality & Reliability – Data retention referenced to JESD47G; endurance rated at 80,000 program/erase cycles.
Typical Applications
- Commercial Embedded Systems – Use as primary non-volatile storage where a 32 Gbit parallel NAND device in a compact BGA package is required.
- Firmware and Code Storage – Store boot images, firmware, and OS components using organized page/block architecture and supported command features.
- High-Density Parallel NAND Implementations – Suitable for designs that integrate parallel ONFI 2.2 NAND devices with synchronous/asynchronous operation.
Unique Advantages
- High-density SLC NAND: 32 Gbit capacity in a 4G × 8 organization provides substantial non-volatile storage in a single device.
- Flexible I/O modes: Supports both asynchronous and synchronous operation with ONFI 2.2 compliance and DQS support for synchronized data transfers.
- Compact BGA package: 100-ball VBGA (12 × 18) enables space-efficient PCB layout for compact systems.
- Extended endurance: Rated for 80,000 program/erase cycles, supporting applications with frequent write/erase activity.
- Comprehensive command set: Advanced commands (program cache, read cache, multi-plane, copyback, OTP) simplify data management and improve throughput for multi-plane operations.
- Commercial temperature suitability: Specified operating range of 0 °C to +70 °C for typical commercial deployments.
Why Choose IC FLASH 32GBIT PARALLEL 100VBGA?
The MT29F32G08ABCABH1-10Z:A is positioned for commercial embedded designs that demand a high-density, reliable parallel NAND flash device with SLC-level endurance and ONFI 2.2 protocol support. Its combination of synchronous/asynchronous operation modes, DQS support, and advanced command features make it suitable for systems that require controlled performance and robust data-management capabilities.
Engineers specifying this device gain a compact 100-ball VBGA package, broad voltage support (VCC and VCCQ options), and documented quality attributes such as JESD47G-referenced data retention and 80,000 P/E cycle endurance—providing a clear technical foundation for long-term storage needs.
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