MT29F32G08ABCABH1-10:A
| Part Description |
IC FLASH 32GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 495 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABCABH1-10:A – IC FLASH 32GBIT PARALLEL 100VBGA
The MT29F32G08ABCABH1-10:A is a 32 Gbit parallel NAND flash memory device in a 100-ball VBGA (12×18) package. It implements SLC NAND architecture with a 4G × 8 memory organization and supports both asynchronous and synchronous I/O modes.
Designed for commercial-temperature embedded storage and code/firmware applications, the device provides a combination of high density, configurable interface timing (including ONFI 2.2 support), and endurance characteristics suitable for long-lived data storage in 0°C to +70°C environments.
Key Features
- Memory Type & Density 32 Gbit NAND flash implemented as 4G × 8, single-level cell (SLC) technology for the specified device.
- Organization & Performance Page size (x8): 8,640 bytes (8,192 + 448). Block size: 128 pages. Read page time: 35 μs (max); program page: 350 μs (typ); erase block: 1.5 ms (typ).
- Interface & Timing Parallel memory interface with ONFI 2.2 compliance. Supports asynchronous modes (up to 50 MT/s per pin) and synchronous modes including DDR operation (up to 200 MT/s per pin) and synchronous timing mode 5. Data strobe (DQS) signals supported for synchronous data timing.
- Clock & Throughput Clock frequency spec listed at 100 MHz; synchronous operation supports DDR 10 ns clocking as defined by device timing modes.
- Power Operating VCC range 2.7–3.6 V. VCCQ options include 1.7–1.95 V or 2.7–3.6 V as supported by the device family.
- Package & Temperature 100-ball VBGA (12×18) package. Commercial operating temperature range: 0°C to +70°C.
- Advanced Command Set Program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, OTP mode, read unique ID, copyback, and standard ONFI command set support.
- Reliability & Endurance Endurance specified at 80,000 program/erase cycles; data retention compliant with JESD47G as noted in the device documentation.
Typical Applications
- Consumer Electronics — Embedded storage and firmware/boot code storage for consumer devices operating within commercial temperature ranges.
- Embedded Systems — Large-capacity non-volatile memory for control and data buffering in compact embedded boards using a parallel NAND interface.
- Communications & Networking (Commercial) — Non-volatile code and data storage for commercial networking equipment where commercial temperature operation and high endurance are required.
Unique Advantages
- High-density SLC Storage: 32 Gbit capacity in a 4G × 8 organization delivers substantial on-board non-volatile storage while retaining SLC endurance characteristics.
- Flexible Interface Modes: Support for asynchronous and synchronous (including DDR) modes plus ONFI 2.2 compatibility enables designers to optimize for throughput or compatibility.
- Robust Endurance Metrics: Rated endurance of 80,000 program/erase cycles and JESD47G data retention compliance provide predictable lifecycle behavior for long-term storage needs.
- Compact Board Integration: 100-ball VBGA (12×18) package reduces PCB footprint for space-constrained applications.
- Advanced Command Support: Program/read cache, multi-plane operations, OTP, and copyback support common flash management strategies and performance optimizations.
- Power Rail Flexibility: 2.7–3.6 V VCC range (with VCCQ options) simplifies integration with common system power rails.
Why Choose IC FLASH 32GBIT PARALLEL 100VBGA?
The MT29F32G08ABCABH1-10:A provides a high-density, SLC-based parallel NAND solution in a compact 100-ball VBGA package for commercial-temperature embedded designs. Its combination of ONFI 2.2-compatible synchronous/asynchronous interfaces, detailed timing modes, and endurance/data-retention characteristics make it suitable for applications that require predictable, long-lived non-volatile storage.
As part of a family that includes multiple densities and package options, this device supports scalable capacity choices while preserving consistent command and feature sets for migration within the same NAND product family.
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