MT29F32G08ABAAAWP-Z:A TR

The MT29F32G08ABAAAWP-Z:A TR is a 32 Gbit non-volatile NAND flash memory device in a 48-TSOP I package with a parallel interface. It implements single-level cell (SLC) NAND architecture and supports both asynchronous and synchronous I/O modes per the supplied technical details.

Designed for embedded storage and system flash applications, this device delivers high-density NAND in a compact 48-TFSOP (0.724", 18.40 mm width) footprint, operating from 2.7 V to 3.6 V and specified for 0°C to 70°C ambient operation.

Key Features

• Core & Memory Organization 32 Gbit SLC NAND organized as 4G × 8 with 4096 blocks; plane architecture: 2 planes × 2048 blocks per plane. Page size (x8): 8,640 bytes (8,192 + 448).
• Interface Modes Supports asynchronous and synchronous I/O. ONFI 2.2-compliant synchronous operation and data strobe (DQS) support for hardware data synchronization.
• Performance Synchronous throughput up to 200 MT/s per pin (synchronous timing modes up to mode 5, DDR clock rate 10 ns). Asynchronous throughput up to 50 MT/s per pin with asynchronous timing modes up to mode 5. Typical array timings: read page 35 µs (max), program page ~350 µs (typ), erase block ~1.5 ms (typ).
• Advanced Command Set Features program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane commands, multi-LUN operations, read unique ID, and copyback operations.
• Power Operating voltage VCC: 2.7–3.6 V. VCCQ options include 1.7–1.95 V or 2.7–3.6 V.
• Reliability & Endurance Endurance rated at 80,000 program/erase cycles with data retention guidance and qualification references provided in the device documentation.
• Package & Temperature Supplied in a 48-TFSOP / 48-TSOP I package (0.724", 18.40 mm width). Specified operating temperature: 0°C to 70°C (TA).
• Power-on & Status RESET (FFh) required as first command after power-on; operation status byte reports completion, pass/fail, and write-protect status.

Typical Applications

• Embedded Storage High-density non-volatile storage for embedded systems that require a compact 48-TSOP package and parallel NAND interface.
• Boot and Firmware Flash On-board system boot code and firmware storage using SLC NAND for endurance and data retention characteristics.
• Industrial and Consumer Electronics (Commercial Temperature) System flash in devices operating within the specified 0°C to 70°C ambient range where parallel NAND integration is required.

Unique Advantages

• High-density SLC NAND: 32 Gbit capacity in a 4G × 8 organization provides substantial non-volatile storage in a compact footprint.
• Flexible I/O modes: Support for both synchronous (ONFI 2.2) and asynchronous operation enables designers to optimize for throughput or legacy parallel interfaces.
• Advanced command capabilities: Program/read cache, multi-plane and multi-LUN operations, OTP and copyback features reduce host complexity for common NAND operations.
• Robust endurance: Rated for 80,000 program/erase cycles, suitable for applications requiring frequent updates within the specified temperature range.
• Board-level integration: Standard 48-TSOP I package (0.724", 18.40 mm) simplifies footprint planning for space-constrained designs.
• Clear power domain options: VCC and VCCQ voltage options allow flexibility in system power rail configuration.

Why Choose MT29F32G08ABAAAWP-Z:A TR?

The MT29F32G08ABAAAWP-Z:A TR positions itself as a high-density SLC NAND flash solution for embedded storage needs that require a parallel interface and compact 48-TSOP packaging. Its combination of ONFI-compliant synchronous operation, advanced command features, and rated endurance supports designs that need reliable, updateable non-volatile memory within a commercial temperature range.

This device is appropriate for engineers specifying on-board system flash, firmware storage, or other embedded storage functions where 32 Gbit capacity, proven NAND command features, and a standard TSOP footprint are primary selection criteria.

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