MT29F32G08ABAAAWP-ITZ:A

The MT29F32G08ABAAAWP-ITZ:A is a 32 Gbit parallel NAND flash memory device implemented in FLASH - NAND technology with a 4G × 8 organization. It provides non-volatile storage with a parallel interface and supports both asynchronous and synchronous I/O timing modes for flexible system integration.

Designed for applications that require industrial-temperature operation and robust NAND features, the device combines ONFI 2.2 compliance, advanced command capabilities, and a compact 48-TSOP I package to simplify embedded storage designs.

Key Features

• Memory Core  Single-level cell (SLC) NAND flash organized as 4G × 8 delivering a total density of 32 Gbit.
• Interface  Parallel NAND interface with support for asynchronous and synchronous I/O; ONFI 2.2-compliant signaling.
• Synchronous Performance  Synchronous timing up to mode 5 with DDR clocking (10 ns), providing up to 200 MT/s read/write throughput per pin.
• Asynchronous Performance  Asynchronous timing up to mode 5 with read/write throughput up to 50 MT/s per pin and RC/RWC minimum 20 ns.
• Array and Latency  Read page: 35 μs (max); Program page: 350 μs (typ); Erase block: 1.5 ms (typ).
• Advanced Command Set  Program cache, read cache (sequential and random), one-time programmable (OTP) mode, multi-plane and multi-LUN operations, read unique ID, and copyback support.
• Operation and Status  RESET (FFh) required as first command after power-on; operation status byte reports completion, pass/fail, and write-protect status.
• Endurance & Retention  Endurance rated at 80,000 program/erase cycles; data retention compliant with JESD47G.
• Voltage & Power  Operating supply VCC: 2.7–3.6 V; VCCQ options: 1.7–1.95 V or 2.7–3.6 V.
• Package  48-TFSOP / 48-TSOP I package with a width of 0.724" (18.40 mm).
• Temperature Range  Industrial-grade operating temperature: –40 °C to +85 °C (TA).

Typical Applications

• Industrial Embedded Systems  Non-volatile program and data storage for controllers and embedded devices operating in industrial temperature ranges.
• Storage Subsystems  Parallel NAND storage for subsystem-level firmware, boot code, and bulk data buffering where block/plane management and multi-plane operations are required.
• Firmware & Code Storage  Reliable code and configuration storage using OTP and read-unique-ID features for secure identification and deployment.

Unique Advantages

• Industrial Temperature Capability: Rated for –40 °C to +85 °C, enabling deployment in temperature-challenging environments.
• High Endurance: 80,000 program/erase cycles for extended in-field lifetime where frequent updates are required.
• Flexible Interface Modes: Supports both asynchronous and synchronous ONFI 2.2-compliant I/O, including DDR synchronous operation for higher throughput per pin.
• Advanced Command Support: Program/read caches, multi-plane and multi-LUN commands, and OTP increase efficiency for block management and application-specific requirements.
• Proven Retention Standards: Data retention designed to JESD47G compliance for predictable long-term storage behavior.
• Compact, Industry-Standard Package: 48-TSOP I package (0.724", 18.40 mm) suitable for space-constrained board designs.

Why Choose IC FLASH 32GBIT PAR 48TSOP I?

The MT29F32G08ABAAAWP-ITZ:A positions itself as a robust, industrial-temperature NAND flash device that combines SLC NAND architecture, ONFI 2.2-compliant interfaces, and an advanced command set to meet demanding embedded storage requirements. Its combination of endurance, data retention compliance, and flexible timing modes makes it suitable for systems that need reliable non-volatile storage with predictable performance.

This device is well suited for designers and procurement teams targeting industrial and embedded applications that require parallel NAND flash in a compact 48-TSOP I package, offering features that support multi-plane operations, caching, OTP, and identification functions to simplify system integration and lifecycle management.

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