MT29F32G08ABAAAM73A3WC1P
| Part Description |
IC FLASH 32GBIT PARALLEL DIE |
|---|---|
| Quantity | 433 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 4G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F32G08ABAAAM73A3WC1P – IC FLASH 32GBIT PARALLEL DIE
The MT29F32G08ABAAAM73A3WC1P is a 32 Gbit non-volatile NAND flash memory provided as a die. It implements NAND flash architecture with parallel interface organization (4G × 8) and is targeted at designs that require high-density, SLC-based persistent storage in a die form factor.
Designed for commercial temperature operation, the device supports both asynchronous and synchronous I/O modes and includes features for high-throughput data transfer, multi-plane operations and advanced flash commands for efficient block management and data movement.
Key Features
- Memory Type & Density 32 Gbit NAND flash organized as 4G × 8, delivered as a die package for direct integration into custom packages or modules.
- Cell Technology Single-level cell (SLC) NAND for endurance and retention characteristics specified in the product datasheet.
- Interface Modes Supports both asynchronous and synchronous I/O. Synchronous operation uses DQS strobes for data synchronization and supports up to synchronous timing mode 5.
- Performance Metrics Synchronous read/write throughput up to 200 MT/s per pin (DDR clock rate 10 ns); asynchronous throughput up to 50 MT/s per pin. Typical array timings include read page 35 μs (max), program page 350 μs (typ), and erase block 1.5 ms (typ).
- Geometry & Organization Page size (×8): 8,640 bytes (8,192 + 448); block = 128 pages; plane configuration: 2 planes × 2,048 blocks per plane; device-level block count for 32Gb = 4,096 blocks.
- Advanced Command Set Includes program cache, read-cache (sequential and random), OTP mode, multi-plane commands, multi-LUN operations, read unique ID and copyback functions to optimize performance and data management.
- Power Operating VCC range 2.7 V to 3.6 V. VCCQ options documented for I/O supply ranges (1.7–1.95 V or 2.7–3.6 V) to support different interface voltage schemes.
- Reliability & Endurance Endurance rated at 80,000 program/erase cycles with data retention and qualification references noted in the datasheet (JESD47G compliance for data retention).
- Operational Requirements Commercial operating temperature range 0 °C to +70 °C; RESET (FFh) required as first command after power-on. Operation status byte available for software detection of completion and status conditions.
- Package Supplied as a die for flexible integration into custom assemblies; other package options for the family are documented in the datasheet.
Typical Applications
- Embedded Storage High-density, non-volatile storage for embedded systems requiring SLC NAND in a die form factor.
- Consumer Electronics Persistent data and firmware storage in commercial-temperature consumer devices that operate within the device’s 0 °C to 70 °C range.
- Data-Intensive Modules Use in module-level designs or custom packages that require parallel NAND with multi-plane and cache programming features to optimize throughput.
Unique Advantages
- High-density die form Provides 32 Gbit of NAND storage in a die package, enabling direct integration into custom modules and compact assemblies.
- SLC endurance Single-level cell technology with 80,000 program/erase cycle endurance for applications that require higher write-cycle robustness.
- Flexible I/O modes Both asynchronous and synchronous interfaces (with DQS support) allow designers to choose the timing and throughput profile that matches system requirements.
- Advanced flash management Built-in support for program/read caches, multi-plane, multi-LUN operations and OTP facilitates efficient data movement and partitioning without external overhead.
- Voltage flexibility VCC and VCCQ ranges documented to support common system power rails and I/O voltage configurations.
Why Choose MT29F32G08ABAAAM73A3WC1P?
The MT29F32G08ABAAAM73A3WC1P is positioned for designs that need a 32 Gbit SLC NAND solution in die form with documented endurance and array performance. Its support for synchronous and asynchronous modes, multi-plane operations and cache features makes it suitable for embedded storage implementations where throughput and reliable block management matter.
This device is suitable for commercial-temperature applications and provides a clear specification set for voltage, timing and endurance to support long-term design planning and system integration by engineers and procurement teams.
If you would like pricing, availability or technical clarification for integrating the MT29F32G08ABAAAM73A3WC1P into your design, request a quote or contact sales to discuss requirements and lead times.