MT29F32G08ABAAAM73A3WC1P

IC FLASH 32GBIT PARALLEL DIE
Part Description

IC FLASH 32GBIT PARALLEL DIE

Quantity 433 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device PackageDieMemory FormatFLASHTechnologyFLASH - NAND
Memory Size32 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackagingDie
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization4G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F32G08ABAAAM73A3WC1P – IC FLASH 32GBIT PARALLEL DIE

The MT29F32G08ABAAAM73A3WC1P is a 32 Gbit non-volatile NAND flash memory provided as a die. It implements NAND flash architecture with parallel interface organization (4G × 8) and is targeted at designs that require high-density, SLC-based persistent storage in a die form factor.

Designed for commercial temperature operation, the device supports both asynchronous and synchronous I/O modes and includes features for high-throughput data transfer, multi-plane operations and advanced flash commands for efficient block management and data movement.

Key Features

  • Memory Type & Density  32 Gbit NAND flash organized as 4G × 8, delivered as a die package for direct integration into custom packages or modules.
  • Cell Technology  Single-level cell (SLC) NAND for endurance and retention characteristics specified in the product datasheet.
  • Interface Modes  Supports both asynchronous and synchronous I/O. Synchronous operation uses DQS strobes for data synchronization and supports up to synchronous timing mode 5.
  • Performance Metrics  Synchronous read/write throughput up to 200 MT/s per pin (DDR clock rate 10 ns); asynchronous throughput up to 50 MT/s per pin. Typical array timings include read page 35 μs (max), program page 350 μs (typ), and erase block 1.5 ms (typ).
  • Geometry & Organization  Page size (×8): 8,640 bytes (8,192 + 448); block = 128 pages; plane configuration: 2 planes × 2,048 blocks per plane; device-level block count for 32Gb = 4,096 blocks.
  • Advanced Command Set  Includes program cache, read-cache (sequential and random), OTP mode, multi-plane commands, multi-LUN operations, read unique ID and copyback functions to optimize performance and data management.
  • Power  Operating VCC range 2.7 V to 3.6 V. VCCQ options documented for I/O supply ranges (1.7–1.95 V or 2.7–3.6 V) to support different interface voltage schemes.
  • Reliability & Endurance  Endurance rated at 80,000 program/erase cycles with data retention and qualification references noted in the datasheet (JESD47G compliance for data retention).
  • Operational Requirements  Commercial operating temperature range 0 °C to +70 °C; RESET (FFh) required as first command after power-on. Operation status byte available for software detection of completion and status conditions.
  • Package  Supplied as a die for flexible integration into custom assemblies; other package options for the family are documented in the datasheet.

Typical Applications

  • Embedded Storage  High-density, non-volatile storage for embedded systems requiring SLC NAND in a die form factor.
  • Consumer Electronics  Persistent data and firmware storage in commercial-temperature consumer devices that operate within the device’s 0 °C to 70 °C range.
  • Data-Intensive Modules  Use in module-level designs or custom packages that require parallel NAND with multi-plane and cache programming features to optimize throughput.

Unique Advantages

  • High-density die form  Provides 32 Gbit of NAND storage in a die package, enabling direct integration into custom modules and compact assemblies.
  • SLC endurance  Single-level cell technology with 80,000 program/erase cycle endurance for applications that require higher write-cycle robustness.
  • Flexible I/O modes  Both asynchronous and synchronous interfaces (with DQS support) allow designers to choose the timing and throughput profile that matches system requirements.
  • Advanced flash management  Built-in support for program/read caches, multi-plane, multi-LUN operations and OTP facilitates efficient data movement and partitioning without external overhead.
  • Voltage flexibility  VCC and VCCQ ranges documented to support common system power rails and I/O voltage configurations.

Why Choose MT29F32G08ABAAAM73A3WC1P?

The MT29F32G08ABAAAM73A3WC1P is positioned for designs that need a 32 Gbit SLC NAND solution in die form with documented endurance and array performance. Its support for synchronous and asynchronous modes, multi-plane operations and cache features makes it suitable for embedded storage implementations where throughput and reliable block management matter.

This device is suitable for commercial-temperature applications and provides a clear specification set for voltage, timing and endurance to support long-term design planning and system integration by engineers and procurement teams.

If you would like pricing, availability or technical clarification for integrating the MT29F32G08ABAAAM73A3WC1P into your design, request a quote or contact sales to discuss requirements and lead times.

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