MT29F256G08EFEBBWP:B TR
| Part Description |
IC FLASH 256GBIT PAR 48TSOP I |
|---|---|
| Quantity | 454 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F256G08EFEBBWP:B TR – IC FLASH 256GBIT PAR 48TSOP I
The MT29F256G08EFEBBWP:B TR is a 256 Gbit non-volatile NAND flash memory device using TLC technology in a parallel interface configuration. It provides high-density storage organized as 32G × 8 and is supplied in a 48-TSOP I package.
This device targets designs that require large-capacity parallel NAND flash memory with a commercial operating temperature range and standard TSOP footprint for board-level integration.
Key Features
- Memory Type & Format Non-volatile FLASH memory implemented as NAND (TLC), suitable for persistent data storage.
- Density & Organization 256 Gbit capacity organized as 32G × 8 to deliver large on-board storage in a single device.
- Interface Parallel memory interface for integration with systems that use parallel NAND memory architectures.
- Voltage Supply Operating supply range of 2.7 V to 3.6 V to match common system power rails.
- Package 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) surface-mount package for standard board-level mounting.
- Operating Temperature Specified for 0 °C to 70 °C (TA), suitable for commercial-temperature environments.
Typical Applications
- Systems requiring parallel NAND storage — Integration where a parallel NAND FLASH memory interface is required for bulk data storage.
- Embedded storage modules — Use as on-board non-volatile storage for devices needing 256 Gbit capacity in a TSOP package.
- Consumer and commercial electronics — Applicable to products operating within the 0 °C to 70 °C temperature range and standard 3.3 V supply domains.
Unique Advantages
- High storage density: 256 Gbit capacity in a single-package device reduces the need for multiple memory components.
- Parallel interface compatibility: Parallel NAND interface supports integration with legacy or parallel-memory architectures.
- Standard TSOP footprint: 48-TSOP I package (18.40 mm width) enables straightforward board-level mounting and reference designs.
- Flexible supply voltage: 2.7 V to 3.6 V operating range aligns with common system power rails.
- Commercial temperature rating: Specified 0 °C to 70 °C operation for typical consumer and commercial applications.
Why Choose MT29F256G08EFEBBWP:B TR?
The MT29F256G08EFEBBWP:B TR positions itself as a high-density, parallel NAND flash option in a standard 48-TSOP I package for systems that require 256 Gbit of non-volatile storage. Its 32G × 8 organization, TLC NAND technology, and 2.7 V–3.6 V supply compatibility make it suitable for board-level integration where a parallel interface and commercial-temperature operation are required.
This device is appropriate for designers and procurement teams targeting solutions that need large on-board flash capacity with a familiar package and electrical footprint, offering predictable integration into existing parallel-memory designs.
To request a quote or submit an inquiry for pricing and lead-time, please contact our sales team or request a formal quotation through your preferred procurement channel.
