MT29F256G08EBHBFJ4-3ITF:B TR
| Part Description |
IC FLASH 256GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,125 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 256 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 32G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT29F256G08EBHBFJ4-3ITF:B TR – IC FLASH 256GBIT PAR 132VBGA
The MT29F256G08EBHBFJ4-3ITF:B TR is a 256 Gbit non-volatile NAND flash memory device in a parallel interface configuration. It implements TLC NAND technology with a 32G × 8 memory organization and is supplied in a 132-VBGA (12×18) package.
Designed for systems that require high-density parallel flash, this device offers a 333 MHz clock frequency and a 2.5 V to 3.6 V supply range, with an operating temperature range of −40°C to 85°C for temperature-tolerant deployment scenarios.
Key Features
- Memory Technology TLC NAND flash providing 256 Gbit of non-volatile storage in a 32G × 8 organization.
- Interface & Performance Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation.
- Voltage Range Wide supply range from 2.5 V to 3.6 V to support a variety of system power architectures.
- Package 132-VBGA package (12×18) optimized for compact board-level integration.
- Operating Temperature Rated for −40°C to 85°C (TA) to address temperature-tolerant application environments.
- Memory Format & Organization Parallel flash format with 32G × 8 organization suitable for byte-wide data paths.
Typical Applications
- High-density non-volatile storage Provides 256 Gbit capacity for systems that require large onboard flash memory in a parallel format.
- Embedded system memory Suited to embedded designs that use parallel NAND with a 2.5 V–3.6 V supply and operate across −40°C to 85°C.
- Firmware and code storage 32G × 8 organization and parallel interface support byte-wide code and firmware storage requirements.
Unique Advantages
- High capacity in a compact package: 256 Gbit density in a 132-VBGA (12×18) package reduces board area for large storage requirements.
- Parallel interface simplicity: Byte-wide (×8) organization simplifies integration with parallel memory controllers.
- Flexible power operation: 2.5 V–3.6 V supply range accommodates diverse system power rails.
- Temperature tolerance: Rated −40°C to 85°C (TA) for deployment in temperature-varied environments.
- Predictable timing: Specified 333 MHz clock frequency for synchronous timing considerations during system design.
Why Choose MT29F256G08EBHBFJ4-3ITF:B TR?
This Micron Technology Inc. 256 Gbit parallel NAND flash device combines high density, a byte-wide memory organization, and a compact 132-VBGA package to address designs needing substantial non-volatile storage in a space-efficient form factor. Its supply voltage range and extended operating temperature make it suitable for a range of embedded and temperature-tolerant applications.
The device is appropriate for engineers and procurement teams specifying parallel NAND flash where capacity, package footprint, and voltage/temperature operating windows are key selection criteria.
Request a quote or submit an inquiry to the sales team for pricing, lead-time, and technical details specific to your design requirements.
